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Maximizing Performance with SiC Discretes

Maximizing Performance with SiC Discretes

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds


DC Output for the 27 MHz Resonant Converter

DC Output for the 27 MHz Resonant Converter

This article is the third of a 3-part series describing a 27 MHz off-line converter.


Switch Mode Power Supply Current Sensing

Switch Mode Power Supply Current Sensing

This article discusses the current-mode control that is widely used for switching mode power supplies and gives insights to current sensing methods.


1700V X-Series HVIGBT Power Modules with Excellent Performance and Reliability

1700V X-Series HVIGBT Power Modules with Excellent Performance and Reliability

This article introduces the new generation of 1700V IGBT power modules called X-Series from Mitsubishi Electric that satisfies the requirements of…


The Efficiency Revolution: Migrating to Advanced Low-Standby Power Architectures

The Efficiency Revolution: Migrating to Advanced Low-Standby Power Architectures

This article discusses the optimization of advancing to low-standby power architectures.


Making GaN Power Electronics Universal

Making GaN Power Electronics Universal

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.


Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current detection in a variety of…


Technical Articles Jan 09, 2019 by ROHM
Power Control at 27 MHz with Variable Reactance

Power Control at 27 MHz with Variable Reactance

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads


Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…


Maximizing System Efficiency with IGBT Modules

Maximizing System Efficiency with IGBT Modules

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the semiconductor industry is responding…


How Long will Your System Last A Discrete IGBT Reliability Study

How Long will Your System Last A Discrete IGBT Reliability Study

High quality and reliability are among the key aspects in the design of a power semiconductor. The influence of these parameters is evident since they


7th Gen NX Type Converter Inverter Brake Modules

7th Gen NX Type Converter Inverter Brake Modules

Applications such as elevator drives or servomotors have several special requirements. One on hand, high efficiency is important, while on the…


QuasiClass E Achieves Power Control and ZISZVS

QuasiClass E Achieves Power Control and ZISZVS

This article features power electronics consultants-engineers basic Quasi Class E circuit as first in series approach to HF power conversion and…


Building a Linear Charger for Wearable Applications

Building a Linear Charger for Wearable Applications

This article highlights Monolithic Power Systems (MPS) MP266x linear charger family as an excellent solution for charger ICs in wearable applications.


Reduce Size and Increase Efficiency with GaN-based LLC Solutions

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…


High Bs Ferrite Material for High Power Application

High Bs Ferrite Material for High Power Application

There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…


Development of a Wideband High-Precision Current Sensor

Development of a Wideband High-Precision Current Sensor

In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…


Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…


Current Source Gate Drivers Boost the Turn-On Performance of IGBT

Current Source Gate Drivers Boost the Turn-On Performance of IGBT

This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by FF1200R12IE5 1200A/1200V power…


Power Modules in Low Power Drive Applications

Power Modules in Low Power Drive Applications

IGBT based power modules are used for a wide power range and voltage range. This article discusses system considerations, effects to the power…