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Practical Limitations of IEC Partial Discharge Standards in Power Modules

Practical Limitations of IEC Partial Discharge Standards in Power Modules

IEC partial standards miss dv/dt, thermal, and micro-PD effects in power modules, limiting their value for inverter-driven reliability prediction.


Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…


Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept…


Thermal Management for SiC Semis—Top Side Cooling as an Innovative Solution

Thermal Management for SiC Semis—Top Side Cooling as an Innovative Solution

The growing demand for powerful and compact power electronics places high demands on the thermal management of modern semiconductor technologies.…


Solving Military-Avionics DC-DC Power Challenges with Modularity—Part 4

Solving Military-Avionics DC-DC Power Challenges with Modularity—Part 4

While the first three parts in this article series detailed military and avionic standards and front-end solutions, this last Part 4 delves into…


Enabling High Efficiency: Gate Driver ICs for Automotive Traction Inverters

Enabling High Efficiency: Gate Driver ICs for Automotive Traction Inverters

E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules help ensure efficient designs.


Improve Motor Lifetime With Slew Rate Control Gate Drive Optocoupler

Improve Motor Lifetime With Slew Rate Control Gate Drive Optocoupler

Learn how Slew Rate Control (SRC) gate drive optocouplers mitigate high dv/dt from PWM in VSDs, reducing motor overvoltage, EMI, and power loss,…


Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…


An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…


Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.


SiC-MPS Diodes Under Stress: Robust Performance Under Extreme Conditions

SiC-MPS Diodes Under Stress: Robust Performance Under Extreme Conditions

What is the reverse recovery behavior of SiC-MPS diodes in scenarios that challenge their thermal and dynamic robustness? This article provides a…


The Next Leap in EV Powertrain Efficiency: The Rise of 3-Level Inverters

The Next Leap in EV Powertrain Efficiency: The Rise of 3-Level Inverters

Learn the advantages of upgrading from a 2-level inverter to a 3-level inverter for SiC-based EV powertrain designs.


Three-Phase Module Based on Monolithic Gan Half-Bridge ICs

Three-Phase Module Based on Monolithic Gan Half-Bridge ICs

Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.


Pulsed Inductance Measurement Replaces Reactance Method for Large Power Chokes

Pulsed Inductance Measurement Replaces Reactance Method for Large Power Chokes

In this article, learn why pulse measurement has advantages over the conventional reactance-based method when it comes to determining the…


The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.


Boost Inverter Efficiency by Decoupling Switching Losses and Switching Speeds

Boost Inverter Efficiency by Decoupling Switching Losses and Switching Speeds

Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…


Advancing Industrial Power Conversion With Silicon Carbide

Advancing Industrial Power Conversion With Silicon Carbide

This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…


Shaping the Future of Mobility: Sustainable Rail Transportation With High Power SiC Modules

Shaping the Future of Mobility: Sustainable Rail Transportation With High Power SiC Modules

Learn how silicon carbide power modules can ensure energy efficiency and weight optimization in hybrid-propulsion trains.


Lossless Current Sensing in Motor Drive Applications

Lossless Current Sensing in Motor Drive Applications

Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…


The Importance of Ruggedness: Littelfuse Polar MOSFETs

The Importance of Ruggedness: Littelfuse Polar MOSFETs

Learn how Littelfuse addresses the planar MOSFET gap with its Polar MOSFET portfolio, offering rugged and thermally reliable products that are…