A new three-phase motor gate driver integrates a bootstrap diode and robust protective mechanisms to streamline designs and reduce switching losses…
A new three-phase motor gate driver integrates a bootstrap diode and robust protective mechanisms to streamline designs and reduce switching losses…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV traction inverters as SiC and GaN…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous rectification designs.
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an…
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement coverage from precision…
The new reference design leverages EPC’s monolithic GaN module to deliver an ultra-compact, high-efficiency motor drive…
The new reference design leverages EPC’s monolithic GaN module to deliver an ultra-compact, high-efficiency motor drive solution specifically…
Unveiled today at PCIM, TI’s new automotive-grade battery monitor IC increases channel density by 44% and embeds…
Unveiled today at PCIM, TI’s new automotive-grade battery monitor IC increases channel density by 44% and embeds real-time EIS to detect internal…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.
Hioki’s modules bring fast, scalable thermistor-based temperature measurement for its LR8450 data logger series.
Hioki’s modules bring fast, scalable thermistor-based temperature measurement for its LR8450 data logger series.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The series delivers up to 4.2 kW from traction batteries with reinforced isolation, liquid cooling, and CAN J1939 control.
The series delivers up to 4.2 kW from traction batteries with reinforced isolation, liquid cooling, and CAN J1939 control.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
Facebook
Google
GitHub
Linkedin