The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
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