Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
August 16, 2022 by Gary Elinoff
Empower Semiconductor has announced that it has expanded its E-CAP™ family of silicon capacitors with technologies that offer further…
August 13, 2022 by Empower Semiconductor
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
July 18, 2022 by Roland Buerger
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
July 11, 2022 by ROHM Semiconductor
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
June 24, 2022 by Gary Elinoff
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
May 18, 2022 by Gary Elinoff
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
March 29, 2022 by Gary Elinoff
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
March 23, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
February 09, 2022 by STMicroelectronics
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
November 05, 2021 by Gary Elinoff
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
November 02, 2021 by Gary Elinoff
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
October 31, 2021 by Alessandro Mascellino
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
October 28, 2021 by Gary Elinoff
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
October 27, 2021 by Hailey Stewart
October 26, 2021 by Hailey Stewart
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