The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.
Navitas Semiconductor and Vishay are offering new MOSFETs for automotive and industrial use.
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI…
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI server racks.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Empower Semiconductor has announced that it has expanded its E-CAP™ family of silicon capacitors with technologies that…
Empower Semiconductor has announced that it has expanded its E-CAP™ family of silicon capacitors with technologies that offer further…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
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