Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
March 10, 2024 by Mike Falter
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
March 05, 2024 by Barbara Vergetis Lundin
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
February 27, 2024 by Aaron Carman
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
February 10, 2024 by Jake Hertz
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
January 20, 2024 by Mike Falter
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
January 13, 2024 by Darshil Patel
Battery charger reference designs from Transphorm offer high power density at a competitive cost for two- and three-wheel electric vehicles using…
December 23, 2023 by Mike Falter
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
December 12, 2023 by Jake Hertz
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
December 02, 2023 by Mike Falter
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
November 15, 2023 by Mike Falter
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
November 04, 2023 by Mike Falter
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip Semiconductor deliver automotive…
October 22, 2023 by Mike Falter
In an interview with EE Power, GaN Systems CEO Jim Witham reveals significant upgrades to its GaN power platform, including a 20 percent…
October 14, 2023 by Jake Hertz
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
October 14, 2023 by Mike Falter
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
September 16, 2023 by Mike Falter
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to bring efficiency and high…
August 20, 2023 by Mike Falter
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
July 19, 2023 by Mike Falter
Patented technologies from new market entrant QPT enable GaN circuits to operate at frequencies as high as 20 MHz, unleashing new performance…
June 11, 2023 by Mike Falter
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
May 21, 2023 by Mike Falter
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
May 15, 2023 by Barbara Vergetis Lundin
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