Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
August 16, 2022 by Gary Elinoff
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
July 18, 2022 by Roland Buerger
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
July 11, 2022 by ROHM Semiconductor
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
June 24, 2022 by Gary Elinoff
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
June 20, 2022 by Gary Elinoff
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
April 01, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
March 23, 2022 by Gary Elinoff
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
March 08, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
February 14, 2022 by Gary Elinoff
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…
February 08, 2022 by VisIC Technologies
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
November 05, 2021 by Gary Elinoff
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
November 02, 2021 by Gary Elinoff
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
October 31, 2021 by Alessandro Mascellino
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