The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package, targeting appliances and…
The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package, targeting appliances and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20 ARMS for humanoid joint…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
OmniOn Power, Recom, and Navitas Semiconductor have launched DC-DC platforms to deliver versatility in efficient power design.
OmniOn Power, Recom, and Navitas Semiconductor have launched DC-DC platforms to deliver versatility in efficient power design.
EPC’s compact EPC91120 GaN motor inverter offers power, sensing, and control for robots, e-mobility, and drones.
EPC’s compact EPC91120 GaN motor inverter offers power, sensing, and control for robots, e-mobility, and drones.
VIPerGaN50W integrates high-voltage GaN technology and advanced control features to deliver silent, efficient power conversion.
VIPerGaN50W integrates high-voltage GaN technology and advanced control features to deliver silent, efficient power conversion.
Bel has launched 65 W GaN-based AC-DC power supplies with a 50% smaller footprint while boosting efficiency and reliability.
Bel has launched 65 W GaN-based AC-DC power supplies with a 50% smaller footprint while boosting efficiency and reliability.
High‑efficiency, high‑density GaN architecture aims to redefine server and AI data‑center power delivery.
High‑efficiency, high‑density GaN architecture aims to redefine server and AI data‑center power delivery.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
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