The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The series delivers up to 4.2 kW from traction batteries with reinforced isolation, liquid cooling, and CAN J1939 control.
The series delivers up to 4.2 kW from traction batteries with reinforced isolation, liquid cooling, and CAN J1939 control.
A new wave of automotive ICs may tackle the complex mix of precision sensing, high-speed signaling, and compact actuation…
A new wave of automotive ICs may tackle the complex mix of precision sensing, high-speed signaling, and compact actuation inside modern EVs and ICEs.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V…
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V automotive applications.
The CarXield B84252 filter series standardizes EMI suppression and simplifies EMC compliance in xEV drivetrains.
The CarXield B84252 filter series standardizes EMI suppression and simplifies EMC compliance in xEV drivetrains.
The expanded series offers higher working voltages to 1000 V in smaller form factors.
The expanded series offers higher working voltages to 1000 V in smaller form factors.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The BD1423xFVJ-C and BD1422xG-C series current sense amplifiers offer design simplicity for electric vehicle and other…
The BD1423xFVJ-C and BD1422xG-C series current sense amplifiers offer design simplicity for electric vehicle and other automotive systems.
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery…
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery replacement, and emergency…
The gate driver features advanced safety compliance and performance.
The gate driver features advanced safety compliance and performance.
The 10 new digital isolator solutions promise higher isolation and data rates for zonal architectures and high-voltage…
The 10 new digital isolator solutions promise higher isolation and data rates for zonal architectures and high-voltage automotive systems.
The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.
The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability,…
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability, and safety in EV powertrains.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV…
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV powertrains and charging circuits.
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