The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in next-generation optical modules
The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in next-generation optical modules
The RMR and RBE series match driver ICs and transformers and are designed for discrete isolated DC-DC power supply designs
The RMR and RBE series match driver ICs and transformers and are designed for discrete isolated DC-DC power supply designs
The TC75W series features faster propagation delay and targets robots, PV inverters, and UPS systems with rail-to-rail…
The TC75W series features faster propagation delay and targets robots, PV inverters, and UPS systems with rail-to-rail input/output and 1.8 V…
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package,…
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package, reducing BOM count and…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device…
The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device counts in high-voltage…
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
The TCKE6-series devices add fast fault response, current limiting, and thermal shutdown in compact TSOP6F packages.
The TCKE6-series devices add fast fault response, current limiting, and thermal shutdown in compact TSOP6F packages.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The family brings 18-channel monitoring and SPI-to-TPL bridge to electric vehicle and energy storage applications.
The family brings 18-channel monitoring and SPI-to-TPL bridge to electric vehicle and energy storage applications.
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery…
The company has launched five reference designs with its InnoSwitch3-AQ flyback ICs, targeting inverter power, battery replacement, and emergency…
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency,…
Navitas and Great Wall Power have launched a 2.5kW GaN-based DC-DC converter with record power density and efficiency, targeting AI data centers…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.
TI’s hot-swap eFuse integrates needed components to handle high power demands, save space, and simplify design.
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability,…
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability, and safety in EV powertrains.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
ST prioritized key tenets of automotive design—safety, efficiency, and performance—in the new single-package PMIC.
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