This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and streamline mission-specific…
This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and streamline mission-specific…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both GaN HEMTs and logic-level…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV traction inverters as SiC and GaN…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement coverage from precision…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse…
The new device keeps the high-frequency switching benefits of GaN while addressing the historical lack of a true reverse body diode.
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any…
With options ranging from 22 V to 200 V, the radiation-hardened gate drivers can bolster power system efficiency for any space mission.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
The MCU family comes in Entry and Main Line products, giving designers a scalable range of performance and memory options.
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, …
Infineon, Toshiba, Nexperia, and Navitas have released FETs offering higher integration levels, smaller form factors, and more power density.
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of…
The latest SiC and GaN devices offer superior performance for various applications, paving the way for the next wave of technological advancements.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness…
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
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