The FETs use Transphorm’s GaN-on-Silicon substrate technology.
February 10, 2024 by Jake Hertz
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
January 20, 2024 by Mike Falter
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
January 13, 2024 by Darshil Patel
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
January 06, 2024 by Mike Falter
By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than 3,500, expanding circuit…
December 21, 2023 by Mike Falter
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
December 12, 2023 by Jake Hertz
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
December 02, 2023 by Mike Falter
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
October 14, 2023 by Mike Falter
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
September 16, 2023 by Mike Falter
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
May 21, 2023 by Mike Falter
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
August 16, 2022 by Gary Elinoff
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
July 18, 2022 by Roland Buerger
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules designed specifically for…
June 27, 2022 by Leapers Semiconductor
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
June 24, 2022 by Gary Elinoff
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
June 20, 2022 by Gary Elinoff
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
May 16, 2022 by Gary Elinoff
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
May 12, 2022 by Gary Elinoff
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
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