Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
March 10, 2024 by Mike Falter
The five parts are 1,200-V, full-bridge quad MOSFETs with current ratings from 27–102 A and RDS(on) values ranging from 20 to 80 mΩ.
March 09, 2024 by Duane Benson
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
March 05, 2024 by Barbara Vergetis Lundin
One critical barrier to EV adoption is their notoriously long charge times. Onsemi aims to address one piece of the puzzle with new…
January 22, 2024 by Aaron Carman
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
January 20, 2024 by Mike Falter
New gate driver circuits address the challenges of wide bandgap semiconductors to help these high-power devices harness their potential.
January 13, 2024 by Darshil Patel
SemiQ’s high-performance silicon carbide power modules are rated to 1200 V and offer high efficiency and power density for energy storage, EV…
January 06, 2024 by Mike Falter
By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than 3,500, expanding circuit…
December 21, 2023 by Mike Falter
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
December 12, 2023 by Jake Hertz
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
November 15, 2023 by Mike Falter
STMicroelectronics is releasing its latest silicon carbide power module for EVs and other high-voltage applications, while onsemi completes the…
November 05, 2023 by Mike Falter
Nexperia and Kyocera AVX will work together on developing high-voltage (650 V) rectifier modules for industrial power supplies, EV charging…
October 21, 2023 by Mike Falter
Bourns is adding ten new silicon carbide (SiC) Schottky barrier diode (SBD) models to its product family to address increasing power density…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
September 16, 2023 by Mike Falter
Semiconductor manufacturer announces new TO leadless packaging option for its 650 V CoolSiC MOSFET family along with model extensions and…
August 05, 2023 by Mike Falter
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
July 19, 2023 by Mike Falter
The products from Diodes hope to elevate efficiency levels in automotive applications. This article examines silicon carbide, its role in…
July 01, 2023 by Jake Hertz
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
May 21, 2023 by Mike Falter
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
May 15, 2023 by Barbara Vergetis Lundin
The company has built a modular line for use in EV chargers, bi-directional microgrids, and a variety of high-power applications.
May 09, 2023 by Barbara Vergetis Lundin
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