Wolfspeed has released two 3.3 kV SiC modules: an LM half-bridge reducing switching losses by 42% and a WolfPACK full-bridge offering 50% smaller…
Wolfspeed has released two 3.3 kV SiC modules: an LM half-bridge reducing switching losses by 42% and a WolfPACK full-bridge offering 50% smaller…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale data centers.
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The silicon carbide gate drivers and an ultra-low-loss isolated current sensor can improve efficiency and power density…
The silicon carbide gate drivers and an ultra-low-loss isolated current sensor can improve efficiency and power density in high-voltage systems.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy infrastructure, and data…
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
The ultra-high-voltage SiC devices are now sampling in power module, discrete, and KGD formats.
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
The Gen-4 modules aim to increase current capability and extend e-mobility inverter lifetime.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
The driver integrates adjustable negative bias and reduces external components in automotive power systems.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
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