By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
The automotive-grade EcoIGBT lineup pairs a 1.55-V saturation voltage with a 7-µs short-circuit withstand time. It…
The automotive-grade EcoIGBT lineup pairs a 1.55-V saturation voltage with a 7-µs short-circuit withstand time. It comprises 12 discrete parts and…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing dose for next-generation…
The DE500 and DE1000 extend the BBA300 family to 1 to 6 GHz in single-band operation
The DE500 and DE1000 extend the BBA300 family to 1 to 6 GHz in single-band operation
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
The WBQ high-voltage platform aims at dense semiconductor and industrial systems with scalable digital control.
The WBQ high-voltage platform aims at dense semiconductor and industrial systems with scalable digital control.
The CMXBxxA Zener diode lineup also cuts leakage and simplifies upgrades for power line protection.
The CMXBxxA Zener diode lineup also cuts leakage and simplifies upgrades for power line protection.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The Evergreen Vento FCM33 delivers modular 33 kW shelves with over 95% efficiency for semiconductor and industrial DC…
The Evergreen Vento FCM33 delivers modular 33 kW shelves with over 95% efficiency for semiconductor and industrial DC power systems.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
The FLXPro Series offers a digitally configurable AC-DC power supply with high power density and modular outputs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
The gate driver features advanced safety compliance and performance.
The gate driver features advanced safety compliance and performance.
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability,…
Infineon’s isolated gate driver ICs support the latest IGBT and SiC technologies, improving efficiency, reliability, and safety in EV powertrains.
The latest Schottky diodes can withstand higher voltages and provide enhanced insulation resistance.
The latest Schottky diodes can withstand higher voltages and provide enhanced insulation resistance.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
Cambridge GaN Devices and Qorvo integrate high-performance microcontrollers with ICeGaN ICs to boost energy efficiency.
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.
With an eye on efficiency, thermal resistance, and size, major power players have added new MOSFETs to their portfolios.
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