Magnachip’s sixth-generation E6 super-junction MOSFETs span 15 parts rated at 500 V and 600 V, with three package options targeting TV SMPS,…
Magnachip’s sixth-generation E6 super-junction MOSFETs span 15 parts rated at 500 V and 600 V, with three package options targeting TV SMPS,…
The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower…
The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower switching losses and 1-3%…
The four 650 V superjunction MOSFET power modules in SOT-227 packages are designed to optimize efficiency and drop-in…
The four 650 V superjunction MOSFET power modules in SOT-227 packages are designed to optimize efficiency and drop-in compatibility for demanding…
The IX800FXF2YMS4 is a 3300-V, 800 A dual SiC MOSFET module rated for 300 kA²s surge current, targeting railway…
The IX800FXF2YMS4 is a 3300-V, 800 A dual SiC MOSFET module rated for 300 kA²s surge current, targeting railway traction, renewable energy, and…
AOS pairs its aMOS E2 high-voltage MOSFET platform with the top-side cooled GTPAK package, targeting power supplies,…
AOS pairs its aMOS E2 high-voltage MOSFET platform with the top-side cooled GTPAK package, targeting power supplies, solar inverters, and…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
The PMF2002 multiplexes 12 customer-functionalized graphene sensing channels on one device, while the new Enterprise…
The PMF2002 multiplexes 12 customer-functionalized graphene sensing channels on one device, while the new Enterprise Reader adds direct electronic…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing dose for next-generation…
Alpha and Omega Semiconductor's AmpStack packaging stacks a complete 80 V half-bridge inside a single DFN6x5 footprint,…
Alpha and Omega Semiconductor's AmpStack packaging stacks a complete 80 V half-bridge inside a single DFN6x5 footprint, cutting board space…
The MOSFET cuts on-resistance by 26% and improves its power-loss figure of merit by 45%, targeting more efficient power…
The MOSFET cuts on-resistance by 26% and improves its power-loss figure of merit by 45%, targeting more efficient power supplies for AI data…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous rectification designs.
The 60 V and 100 V parts pair low on-resistance with small footprints as industrial systems migrate from 12 V and 24V…
The 60 V and 100 V parts pair low on-resistance with small footprints as industrial systems migrate from 12 V and 24V rails toward 48 V distribution
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an…
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V…
Paired with compact smart power stages, the new digital multiphase controllers may extend notebook battery life by up to an hour.
Paired with compact smart power stages, the new digital multiphase controllers may extend notebook battery life by up to an hour.
The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in…
The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in next-generation optical modules
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.
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