Paired with compact smart power stages, the new digital multiphase controllers may extend notebook battery life by up to an hour.
Paired with compact smart power stages, the new digital multiphase controllers may extend notebook battery life by up to an hour.
The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in…
The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in next-generation optical modules
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges…
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges in server and automotive…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and…
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and noise immunity.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
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