The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
May 28, 2022 by Wilhelm Rusche
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.
February 07, 2022 by ROHM Semiconductor
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
October 28, 2021 by Gary Elinoff
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
October 27, 2021 by Hailey Stewart
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
October 26, 2021 by Hailey Stewart
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
October 11, 2021 by Hailey Stewart
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
September 30, 2021 by Gary Elinoff
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
September 15, 2021 by Gary Elinoff
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
August 31, 2021 by Antonio Anzaldua Jr.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
August 10, 2021 by Hailey Stewart
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
July 22, 2021 by Hailey Stewart
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
July 15, 2021 by Gary Elinoff
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