Three-phase bridge power modules from Microchip use high-voltage SiC and IGBT switches to power More Electric Aircraft applications.
February 05, 2023 by Mike Falter
Analog Devices' portfolio of antenna-to-bits solutions makes possible today’s mission-critical and rugged advanced aircraft, space systems,…
August 21, 2022 by Gabino Alonso
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
June 20, 2022 by Gary Elinoff
The fresh diodes “set new benchmarks” for current density in their class, the company says.
May 10, 2022 by Gary Elinoff
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
Developed to satisfy the stringent requirements of high-torque applications, the new ratchet-coupling offerings can handle currents of up to 430 A.
April 13, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
March 29, 2022 by Gary Elinoff
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
March 22, 2022 by Gary Elinoff
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
March 08, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature, long-living capacitors.
February 26, 2022 by Ahmad Ezzeddine
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
February 14, 2022 by Gary Elinoff
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…
February 06, 2022 by Solitron Devices
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
October 11, 2021 by Gary Elinoff
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
October 06, 2021 by Hailey Stewart
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
October 04, 2021 by Hailey Stewart
AEC-Q200 Qualified Device Saves Board Space While Lowering Component Counts and Placement Costs.
September 22, 2021 by Hailey Stewart
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