EEPower

Latest Semiconductors Technical Articles

Categories

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

This article discusses the Enhanced Trench cell or TSPT+ technology and its features and advantages.


Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


Dealing with CommonMode Voltage Influence

Dealing with CommonMode Voltage Influence

The extreme signal rise-time made possible by wide-bandgap semiconductors create common mode voltages at the switching frequency and above. Without…


Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…


Wide Band Gap is No Mystery

Wide Band Gap is No Mystery

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…


Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…


Accelerating the Adoption of SiC Power

Accelerating the Adoption of SiC Power

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…


DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

The acceleration of global warming and pollution, as well as international carbon emission targets, initiated a process to reduce emissions in all…


High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…


Full SiC Performance in Power Modules

Full SiC Performance in Power Modules

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.


SiC Cascodes and Their Advantages in Power Electronic Applications

SiC Cascodes and Their Advantages in Power Electronic Applications

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.


SiC in Industrial Auxiliary Power Supplies

SiC in Industrial Auxiliary Power Supplies

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…


7th Generation 1700 V IGBT Modules: Loss Reduction and Excellent System Performance

7th Generation 1700 V IGBT Modules: Loss Reduction and Excellent System Performance

This article features Mitsubishi Electric Europe B.V. 7th Generation IGBT Modules with the analysis of IGBT chip and diode chip performances.


Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…


GaN Power ICs Enable the New Revolution in Power Electronics

GaN Power ICs Enable the New Revolution in Power Electronics

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…


High Power Electronics Cleaning Requirements for Improved Efficiency and Reliability

High Power Electronics Cleaning Requirements for Improved Efficiency and Reliability

This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.


High Power Density High Performance X-Series 4500V IGBT Power Modules

High Power Density High Performance X-Series 4500V IGBT Power Modules

This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.