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The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


Compensation-Free Voltage Regulators: The Continuing Evolution of Digital Compensation

Compensation-Free Voltage Regulators: The Continuing Evolution of Digital Compensation

This article introduces the advantages of using digital compensation for digital voltage regulators over traditional analog voltage regulators.


Achieving very low or zero standby power for AC-DC power supplies

Achieving very low or zero standby power for AC-DC power supplies

In the future, the average household will have more than 60 devices plugged in and on standby 24 hours a day. From coffee machines and TVs to chargers


Dynamic Parameters Measurement for Fast Switching Devices

Dynamic Parameters Measurement for Fast Switching Devices

This article introduces LEMSYS PRO-AC, a test equipment specifically dedicated to fast-medium power semiconductor devices with better performance.


System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


E-Mobility for Components and EMC – Simulation and Measurement

E-Mobility for Components and EMC – Simulation and Measurement

This article highlights IMG Electronic & Power Systems and University of Ruse Angel Kanchev simulation models of E Mobility for Components and…


Temperature Limits for Power Modules – Part 2: Lifetime

Temperature Limits for Power Modules – Part 2: Lifetime

This article talks about calculating if the module internal interconnects could withstand the temperature swings and meet the design lifetime…


20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

This article highlights Efficient Power Conversion ET power supply using EPC8004 high frequency eGaN FETs for 4G LTE wireless base station…


4th Generation Field Stop IGBT with Enhanced Latch up Immunity

4th Generation Field Stop IGBT with Enhanced Latch up Immunity

This article highlights Fairchild Semiconductor 4th generation Field Stop (FS) IGBT that offers superior device performance under static and…


6500 V X-Series High Voltage IGBT Modules

6500 V X-Series High Voltage IGBT Modules

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.


Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…


Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

This article highlights Mitsubishi Electric Dual-In-line Package (DIP) Intelligent Power Module SLIMDIP with ratings of 5A and 15A/600V in a…


IGCT – A Highly Efficient Device with Continuing Great Success in High Power Applications

IGCT – A Highly Efficient Device with Continuing Great Success in High Power Applications

This article compares the IGCT with IGBT and discusses its advantages of IGCT over IGBT in terms of power density as well as device and converter…


The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

This article discusses the advantages brought about by IGBT5 and .XT Technology in increasing the power density and lifetime of power modules.


PLECS Goes Real-Time: A New HILSystem for Power Electronics

PLECS Goes Real-Time: A New HILSystem for Power Electronics

This article introduces Plexim's PLECS RT Box and its benefits for system modelling, design, simulation and testing of power electronics systems.


BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.


High Power Digital Inrush Current Controller

High Power Digital Inrush Current Controller

This article highlights IXYS HPDICC that offers flexibility in implementing a unique control algorithm for the development of an efficient power…


Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

This article features Infineon temperature limits for power module by understanding the effect of changing operating conditions and application…