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Compact High-Current Inductors Based on Coupled Tape-Wound Cores

Compact High-Current Inductors Based on Coupled Tape-Wound Cores

This article highlights TH Köln - Cologne University of Applied Sciences coupled-inductor configurations for high power densities based on two…


Using MOSFET Controllers to Drive GaN EHEMTs

Using MOSFET Controllers to Drive GaN EHEMTs

This article discusses the difference of Si MOSFET with separate controller driver, an integrated GaN/driver, and GaN power transistors with a…


The Double Pulse Test System for Power Semiconductor Dynamic Characterization

The Double Pulse Test System for Power Semiconductor Dynamic Characterization

This article highlights Keysight PD1500A Dynamic Power Device Analyzer/DPT as next generation dynamic test platform for power semiconductor device.


High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

This article features JSC Proton-Electrotex research and development to find structural and technological solutions providing increased insulation…


Design Automation Conference: An Important Update for the Electronics Industry

Design Automation Conference: An Important Update for the Electronics Industry

This article highlights Bodo’s Power Systems US-Correspondent this year 56th Design Automation Conference (DAC) plus Exhibition took place in Las…


Acoustic Investigation for Internal Structural Defects in TO247 and TO220 Packages

Acoustic Investigation for Internal Structural Defects in TO247 and TO220 Packages

This article highlights Nordson SONOSCAN with the University of Texas at Dallas TO-247 packages designed for high-power, along with TO-220s…


A New Dual-in-Line Surface Mountable IPM for Motor Drive Applications

A New Dual-in-Line Surface Mountable IPM for Motor Drive Applications

This article features Alpha and Omega Semiconductor dual-in-line SMD-type intelligent power module (IPM) specialized for low-power BLDC motor-drive…


Thermal Resistance and Capacitance are Critical Parameters of Power Devices

Thermal Resistance and Capacitance are Critical Parameters of Power Devices

This article highlights Dr. – Ing. Seibt of Vienna thermal resistance and capacitance parameters in power devices that deals with GaN and SiC…


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Simple Slew-Rate Control Technique Cuts Turn-on Energy

Simple Slew-Rate Control Technique Cuts Turn-on Energy

This article highlights Infineon 1EDI60I12AF gate-driver ICs that offers reductions of the turn-ON energy Eon up to 25% with enforced sourcing is…


Optimized Inverter Design by IPMs and SiC-SBDs

Optimized Inverter Design by IPMs and SiC-SBDs

This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.


Powering the World with Technology that Achieves More and Consumes Less

Powering the World with Technology that Achieves More and Consumes Less

This article highlights Roland R. Ackermann discussion about Infineon power products at PCIM2019 such as CoolSiC, CoolGaN devices, and new…


Leakage Inductance Considerations for Custom Transformers

Leakage Inductance Considerations for Custom Transformers

This article highlights Ridley Engineering Incorporated Leakage Inductance Considerations and Designs of Custom Transformers.


Datalogging Platform for Junction Temperature Estimation and Converter Diagnostics

Datalogging Platform for Junction Temperature Estimation and Converter Diagnostics

This article describes the validation of the technology and its use in a wide range of applications.


Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules that contains DC/DC…


11 Technical FAQs About the Danfoss DCMTechnology Platform for Automotive Traction Inverters

11 Technical FAQs About the Danfoss DCMTechnology Platform for Automotive Traction Inverters

This article features Danfoss Silicon Power GmbH DCM™Technology Platform for Automotive Traction Inverters that covers an interview with…


A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

This article highlights ABB Semiconductors Reverse-Conducting Integrated Gate Commuted Thyristors platform or RC-IGCT in high power semiconductor…


The Next Generation of High Power IGBT Modules

The Next Generation of High Power IGBT Modules

This article highlights Mitsubishi Electric Europe B.V LV100 High Power IGBT Modules for Wind Converter, Photovoltaic Inverter and Motor Drives.


Potential of Wide Bandgap Semiconductors in Power Electronic Applications

Potential of Wide Bandgap Semiconductors in Power Electronic Applications

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.


Leading-Edge Power Modules for the New Era in Traction Converters

Leading-Edge Power Modules for the New Era in Traction Converters

This article highlights Infineon Power Modules development for traction applications particularly in energy-efficiency and emission-free…