Vishay Adds 1200 V SiC MOSFET Power Modules in SOT-227 Packages

Across automotive, industrial, energy, and telecom equipment, power conversion designs keep trending toward higher bus voltages and faster switching speeds. In many systems, 1200 V silicon carbide has become the practical choice because it can help cut losses and trim down magnetics and cooling hardware. Since most platforms are still built around established module footprints, dropping in a new device without reworking the mechanical layout matters just as much as squeezing out a few extra efficiency points.

Vishay Intertechnology has introduced five 1200 V silicon carbide (SiC) MOSFET power modules aimed directly at those requirements. The VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120 are housed in the industry-standard SOT-227 package and are offered in single-switch and low-side chopper configurations. The modules combine Vishay’s latest-generation SiC MOSFET technology with integrated soft body diodes to reduce reverse recovery losses and improve switching efficiency.

One of five new power modules in a SOT-227 package. Image used courtesy of Vishay

Current Ratings and Electrical Performance

Vishay’s modules cover a wide operating range. Continuous drain current ratings span from 50 A up to 200 A, depending on the device. On-resistance is specified as low as 12.1 mΩ for the 200 A version, with higher values of 43 mΩ and 47 mΩ at the 50 A level.

Absolute max ratings for the VS-SF50LA120. Image used courtesy of Vishay

All five devices are rated at 1200 V (VDSS) and can support high-speed switching due to the low capacitance characteristics typical of SiC technology. Maximum operating junction temperature is specified at +175°C, allowing the modules to operate in thermally demanding environments, such as HVAC drives, UPS systems, and large-scale battery storage.

Each module uses a SiC MOSFET with a specialized soft-body diode that facilitates effective electrical flow management, making it beneficial for applications such as DC/DC converters, off-board electric vehicle chargers, and solar power systems. Minimizing energy losses during rapid switching reduces heat generated by the system. As a result, they can lead to simpler and smaller cooling systems, making them more efficient overall.

SOT-227 Package and Drop-In Replacement

One of the more practical aspects of the release is the use of the SOT-227 package. This package is widely used in industrial power designs, making the modules drop-in replacements for existing silicon or older SiC solutions. Designers can upgrade to newer SiC performance without revisiting PCB layout or mechanical mounting.

Generation (2) SOT-227. Image used courtesy of Vishay

The molded SOT-227 package also provides electrical insulation up to 2500 V for one minute. That built-in isolation reduces the need for additional insulating hardware between the module and heatsink, simplifying assembly and lowering system cost.

The portfolio includes the following configurations:

• VS-SF50LA120: 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
• VS-SF50SA120: 1200 V, 50 A, 47 mΩ, single switch, SOT-227
• VS-SF100SA120: 1200 V, 100 A, 23 mΩ, single switch, SOT-227
• VS-SF150SA120: 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
• VS-SF200SA120: 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227

This range allows designers to scale current capability within a consistent mechanical format.

Target Applications

The modules are intended for medium- to high-frequency power conversion systems in automotive, industrial, energy, and telecom applications. Specific examples include solar inverters, electric vehicle off-board chargers, switched-mode power supplies, DC/DC converters, UPS systems, HVAC drives, battery storage platforms, and telecom power units.

In these systems, switching efficiency directly impacts system size, thermal design, and operating cost. Lower conduction and switching losses can reduce heatsink size or improve overall system efficiency, especially at higher switching frequencies where SiC devices typically outperform silicon counterparts.

Samples and production quantities of all five modules are available, with reported lead times of 13 weeks. With 1200 V capability, current ratings up to 200 A, and SOT-227 compatibility, Vishay’s latest SiC MOSFET modules provide an incremental but practical path to higher-efficiency power conversion without requiring a redesign of established hardware platforms.