EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and…
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and noise immunity.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy infrastructure, and data…
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V…
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V automotive applications.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The CoolSiC G2 MOSFET variants expand cooling options and compact form factors to medium-power SMPS designs.
The photorelay aims at 800 V battery management systems in electric vehicles and energy storage applications.
The photorelay aims at 800 V battery management systems in electric vehicles and energy storage applications.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
The 1200 V CoolSiC G2 MOSFETs deliver higher power density, lower losses, and improved thermal performance for industrial systems.
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Toshiba’s SOP Advance(E) package yields lower losses and better thermal performance.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
STMicroelectronics’ STDRIVEG610 and STDRIVEG611 deliver optimized control for GaN-based power and motor systems.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
The MOSFETs feature numerous structural and material innovations in a DFN 8x8 package.
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