Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
December 02, 2023 by Mike Falter
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
November 15, 2023 by Mike Falter
High-energy and power-dense supercapacitor technologies from Kyocera AVX and Littelfuse help with power management and extend operating times for…
November 13, 2023 by Mike Falter
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
November 04, 2023 by Mike Falter
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip Semiconductor deliver automotive…
October 22, 2023 by Mike Falter
The device from Toshiba offers an exceptionally low on-resistance to help miniaturize power electronics. This article will examine the…
July 29, 2023 by Jake Hertz
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
July 19, 2023 by Mike Falter
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
April 14, 2023 by Mike Falter
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
March 11, 2023 by Littelfuse
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
November 20, 2022 by Mike Falter
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
May 28, 2022 by Wilhelm Rusche
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.
February 07, 2022 by ROHM Semiconductor
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
October 28, 2021 by Gary Elinoff
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