This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…
This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…
This article discusses Power Integrations Switcher ICs offering significant advantages of programmability,…
This article discusses Power Integrations Switcher ICs offering significant advantages of programmability, configurability, and adjustability.
This article discusses Gallium Nitride Power Devices for Automotive Applications.
This article discusses Gallium Nitride Power Devices for Automotive Applications.
This article features EPCOS AG product PQSine S series designed for 3-phase grids with or without neutral conductors and…
This article features EPCOS AG product PQSine S series designed for 3-phase grids with or without neutral conductors and enables harmonics to be…
This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET…
This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…
This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best…
This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…
This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal…
This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…
This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT…
This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.
This article describes the advancements on the electromagnetic components' designs, analysis, simulations, cores and wires
This article describes the advancements on the electromagnetic components' designs, analysis, simulations, cores and wires
This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.
This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.
This article discusses the advantages of Littelfuse's Ignition IGBTs and how Electric Vehicles may have a significant…
This article discusses the advantages of Littelfuse's Ignition IGBTs and how Electric Vehicles may have a significant impact on environment…
This article discusses the technological improvement that is presented by Gen 3 IGBTS from Rohm Semiconductor to be used…
This article discusses the technological improvement that is presented by Gen 3 IGBTS from Rohm Semiconductor to be used for many industrial…
This article highlights Vincotech Thermal Interface Material (TIM) family that has a influence on the heat transfer from…
This article highlights Vincotech Thermal Interface Material (TIM) family that has a influence on the heat transfer from the power module to the…
This article discusses power solutions to simplify design and increase system reliability of household energy storage systems.
This article discusses power solutions to simplify design and increase system reliability of household energy storage systems.
This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous…
This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous generation thyristor.
This article discusses how the implementation of three module approach can help lower the total cost of ownership and…
This article discusses how the implementation of three module approach can help lower the total cost of ownership and maximum junction temperature.
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in…
This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.
This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout…
This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in…
This article provides insight into the latest generation of 6.5kV HiPak modules with reliable performance demonstrated in the new THB-HVDC test.
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction…
This article discusses a flexible approach to gate drive designs using nHPD2 package from Hitachi targeted at traction applications.
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