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SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

SiC Cascode in 440 VAC – 800 VDC Power Factor Correction

This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…


Silicon and GaN Transistor Comparison: Optimized Inverter Design

Silicon and GaN Transistor Comparison: Optimized Inverter Design

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.


User Configurable Gate Drives

User Configurable Gate Drives

This article discusses the user configurable gate drives' performance benefits for converter power stack designers and maintenance engineers.


Avoidance of Reverse Recovery Ringing in Wide Band Gap Devices

Avoidance of Reverse Recovery Ringing in Wide Band Gap Devices

This article discusses the benefits of nHPD2 packaging technology and the wider market need for operational high power wide band gap devices.


SiC for safeguarding AC and DC power circuitry

SiC for safeguarding AC and DC power circuitry

This article discusses the novel Silicon Carbine based hybrid surge suppressor module for safeguarding AC and DC power circuitry and its benefits.


Reference Design for Inverters: First integrated solution for e-mobility and industry

Reference Design for Inverters: First integrated solution for e-mobility and industry

This article discusses the TDK and Infineon's new integrated solution for inverters for e-mobility power trains and industrial applications.


Increased Packing Density From Double-Sided Power Semiconductor Cooling

Increased Packing Density From Double-Sided Power Semiconductor Cooling

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.


Innova Macroprocessors

Innova Macroprocessors

This article introduces SPCO's Innova Macroprocessor, a solid-state, scalable power module sourcing optical signals to trigger control circuits.


Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

This article introduces Mitsubishi Electric Corporation's new three-level topology power modules with optimized packaging for 3-level inverter…


A Commercial High Temperature Capacitor Dielectric for Power Applications

A Commercial High Temperature Capacitor Dielectric for Power Applications

This article introduces DuPont Teijin Films' Teonex, a new dielectric for DC-Link and snubber power capacitors and discusses its features and…


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


4th Generation Field Stop IGBT with Enhanced Latch up Immunity

4th Generation Field Stop IGBT with Enhanced Latch up Immunity

This article highlights Fairchild Semiconductor 4th generation Field Stop (FS) IGBT that offers superior device performance under static and…


6500 V X-Series High Voltage IGBT Modules

6500 V X-Series High Voltage IGBT Modules

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.


Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…


Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

This article highlights Mitsubishi Electric Dual-In-line Package (DIP) Intelligent Power Module SLIMDIP with ratings of 5A and 15A/600V in a…


The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

This article discusses the advantages brought about by IGBT5 and .XT Technology in increasing the power density and lifetime of power modules.


BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.