This article discusses the technological improvement that is presented by Gen 3 IGBTS from Rohm Semiconductor to be used for many industrial…
This article discusses the technological improvement that is presented by Gen 3 IGBTS from Rohm Semiconductor to be used for many industrial…
This article presents an approach to minimize the overall standby power for household appliances using advanced…
This article presents an approach to minimize the overall standby power for household appliances using advanced technology and power architectures.
This article describes research of Proton-Electrotex, JSC in modeling thermal behavior of IGBT modules in conversion equipment.
This article describes research of Proton-Electrotex, JSC in modeling thermal behavior of IGBT modules in conversion equipment.
This article discusses the alternative and new devices that can maintain or improve the thermal performance of MOSFETs in…
This article discusses the alternative and new devices that can maintain or improve the thermal performance of MOSFETs in power supplies.
This article introduces technologies enabling developers to significantly reduce the switching losses in power…
This article introduces technologies enabling developers to significantly reduce the switching losses in power converters, thus reducing costs.
This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to…
This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.
This article reviews a typical approach for powering a smart hub and presents a new solution that delivers more efficient…
This article reviews a typical approach for powering a smart hub and presents a new solution that delivers more efficient power and smaller space.
This article introduces the applications of 1200V Hyperfast diodes and discusses hard switching, soft switching and power…
This article introduces the applications of 1200V Hyperfast diodes and discusses hard switching, soft switching and power losses in diode behavior.
This article discusses the advantages of SiC T-MOSFET compared to the conventional IGBT in terms of power savings and…
This article discusses the advantages of SiC T-MOSFET compared to the conventional IGBT in terms of power savings and heatsink size reduction.
This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing…
This article discusses techniques on designs to increase the efficiency of conversion at high power by utilizing improvements of converters.
This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2…
This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.
Designing modern power circuits starts with a choice of circuit material. This choice is critical for meeting performance…
Designing modern power circuits starts with a choice of circuit material. This choice is critical for meeting performance goals. The material must…
This article discusses the variety of improvements of the new generation of silicon pulse thyristors for commutation of…
This article discusses the variety of improvements of the new generation of silicon pulse thyristors for commutation of current impulses.
This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.
This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.
This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over…
This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.
This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating…
This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating (IH)…
This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature…
This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature operation.
This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for…
This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.
In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field…
In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…
This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.
This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.