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eGaN® FET-Based Synchronous Rectification

eGaN® FET-Based Synchronous Rectification

This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…


Making the Most of Three-Level NPC Topology

Making the Most of Three-Level NPC Topology

This article looks at two chipset combinations to highlight the importance of understanding how the target parameters affect the selection of chips…


New Transfer Molded SMD Type IPM from Mitsubishi Electric

New Transfer Molded SMD Type IPM from Mitsubishi Electric

Mitsubishi Electric introduced a new addition to its line of new transfer molded SMD type Intelligent Power Module - the MISOP.


Integrated Circuits Offer Enhanced Protection & Improved Safety Features for High Reliability Power Supplies

Integrated Circuits Offer Enhanced Protection & Improved Safety Features for High Reliability Power Supplies

This article discusses the high-reliability power systems and increasing efficiency and reliability.


Hitachi Suijin Series of Power Modules for Electric Vehicles

Hitachi Suijin Series of Power Modules for Electric Vehicles

Hitachi’s Suijin series of automotive power modules provide a range of high power, high-performance power modules to meet the most demanding…


Maximize Your Power to the Next Level of Power Density With New Chips and Topologies

Maximize Your Power to the Next Level of Power Density With New Chips and Topologies

MiniSKiip knows no limits to new applications and markets due to its easy assembly concept. The MiniSKiiP Dual Split MLI provides an output power…


Optimized Thermal Layout for CIPOSTM Nano Half-Bridge Intelligent Power Modules

Optimized Thermal Layout for CIPOSTM Nano Half-Bridge Intelligent Power Modules

This article discusses PCB design considerations required to achieve the best thermal performance in a motor drive using CIPOS Nano half-bridge…


Using Sintering Technology to Reduce Failure Rate of High Current Thyristors

Using Sintering Technology to Reduce Failure Rate of High Current Thyristors

This article explores several ways to reduce degradation and early failures of power semiconductor thyristors with a semiconductor chip dia. 80 mm…


Power Supply with Excellent Insulation for MediumVoltage Systems

Power Supply with Excellent Insulation for MediumVoltage Systems

This article discusses GvA Power Supply System and some insights to its features and advantages.


IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…


Silicon Nitride Substrates for Improved Performance in Power Electronics

Silicon Nitride Substrates for Improved Performance in Power Electronics

This article discusses the comparison between silicon nitride substrates and other materials and offers insights of Silicon Nitride Substrates.


eGaN® Technology is Coming to Cars

eGaN® Technology is Coming to Cars

This article discusses Gallium Nitride Power Devices for Automotive Applications.


Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

This article discusses the Enhanced Trench cell or TSPT+ technology and its features and advantages.


How to Ensure Correct RMS Measurements

How to Ensure Correct RMS Measurements

This article features Dr.- Ing. Seibt about the correct RMS measurements that also describes many obstacles and pitfalls on the way to correct RMS…


Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


Dealing with CommonMode Voltage Influence

Dealing with CommonMode Voltage Influence

The extreme signal rise-time made possible by wide-bandgap semiconductors create common mode voltages at the switching frequency and above. Without…


Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…