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Using Sintering Technology to Reduce Failure Rate of High Current Thyristors

Using Sintering Technology to Reduce Failure Rate of High Current Thyristors

This article explores several ways to reduce degradation and early failures of power semiconductor thyristors with a semiconductor chip dia. 80 mm…


Power Supply with Excellent Insulation for MediumVoltage Systems

Power Supply with Excellent Insulation for MediumVoltage Systems

This article discusses GvA Power Supply System and some insights to its features and advantages.


IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…


Silicon Nitride Substrates for Improved Performance in Power Electronics

Silicon Nitride Substrates for Improved Performance in Power Electronics

This article discusses the comparison between silicon nitride substrates and other materials and offers insights of Silicon Nitride Substrates.


eGaN® Technology is Coming to Cars

eGaN® Technology is Coming to Cars

This article discusses Gallium Nitride Power Devices for Automotive Applications.


Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

This article discusses the Enhanced Trench cell or TSPT+ technology and its features and advantages.


How to Ensure Correct RMS Measurements

How to Ensure Correct RMS Measurements

This article features Dr.- Ing. Seibt about the correct RMS measurements that also describes many obstacles and pitfalls on the way to correct RMS…


Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


Dealing with CommonMode Voltage Influence

Dealing with CommonMode Voltage Influence

The extreme signal rise-time made possible by wide-bandgap semiconductors create common mode voltages at the switching frequency and above. Without…


Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…


Wide Band Gap is No Mystery

Wide Band Gap is No Mystery

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…


Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…


Accelerating the Adoption of SiC Power

Accelerating the Adoption of SiC Power

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…


DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

DCM 1000 Designed to Meet the Future Demand of Electric Vehicle Drive Train

The acceleration of global warming and pollution, as well as international carbon emission targets, initiated a process to reduce emissions in all…


High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power…


Full SiC Performance in Power Modules

Full SiC Performance in Power Modules

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.


SiC Cascodes and Their Advantages in Power Electronic Applications

SiC Cascodes and Their Advantages in Power Electronic Applications

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.