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How Silicon Carbide can Improve Switched Power Converter Designs

How Silicon Carbide can Improve Switched Power Converter Designs

When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…


Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…


Understanding Atomic Energy Levels in Solid-state Electronic Devices

Understanding Atomic Energy Levels in Solid-state Electronic Devices

Learn about the shell structure of atomic energy levels.


How Does Flyback Synchronous Rectification Affect EMI?

How Does Flyback Synchronous Rectification Affect EMI?

This article highlights Monolithic Power Systems flyback adapter design with synchronous rectification (SR) as different from conventional set-ups…


How SiC MOSFETS are Made and How They Work Best

How SiC MOSFETS are Made and How They Work Best

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.


Minimizing Thermo-Mechanical Stress in Chipscale eGaN Devices

Minimizing Thermo-Mechanical Stress in Chipscale eGaN Devices

This article highlights EPC EPC2001C and EPC2053 temperature cycling results.


Dual Component 700A Thyristor Modules with Minimized Static and Heat Losses

Dual Component 700A Thyristor Modules with Minimized Static and Heat Losses

This article highlighs Proton Electrotex dual-component A2-type power thyristor module with a baseplate width of 60 mm rated for a voltage of 1800…


Single-Point and Multi-Point Signal Grounding

Single-Point and Multi-Point Signal Grounding

A grounding arrangement must be designed and implemented adequately for the electronic equipment’s proper performance


Light as an Electrical Energy Source

Light as an Electrical Energy Source

In this article, the second in our series, we’ll discuss phenomena, such as photoelectric effect and photoconductive effect, that can be used to…


The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…


Utilizing GaN with High-Performance Gate Driving

Utilizing GaN with High-Performance Gate Driving

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.


Understanding Thermal Management of Chip-Scale GaN Devices

Understanding Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).


Eliminating EMC at the Source

Eliminating EMC at the Source

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.


3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


On-Chip Electrostatic Discharge Protection for ICs

On-Chip Electrostatic Discharge Protection for ICs

Learn about the electrostatic discharge (ESD) events, component ESD qualification tests, and the ESD protection strategies commonly employed in ICs.


Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

Interpreting and Validating Dynamic Characteristics for Wide Bandgap Power Device Data Sheets

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.


Chip-Embedded Technology Enables High Current Density Power

Chip-Embedded Technology Enables High Current Density Power

This article highlights TDK 3D design techniques that can help reduce parasitic losses, and improve thermal performance while also reducing the PCB…