The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
April 25, 2022 by Gary Elinoff
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
April 21, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
April 01, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
March 29, 2022 by Gary Elinoff
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
March 08, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.
February 17, 2022 by Gary Elinoff
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
February 14, 2022 by Gary Elinoff
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
February 09, 2022 by STMicroelectronics
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…
February 08, 2022 by VisIC Technologies
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…
February 06, 2022 by Solitron Devices
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
October 27, 2021 by Hailey Stewart
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
October 24, 2021 by Gary Elinoff
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
October 14, 2021 by Gary Elinoff
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
October 11, 2021 by Gary Elinoff
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