Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules…
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules designed specifically for…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
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