New Industry Products

Microchip Expands its Silicon Carbide Power Portfolio with New 3.3 kV MOSFETs and Schottky Barrier Diodes

March 29, 2022 by Gary Elinoff

The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.

With its new MSC025SMA330 series of 3.3 kV SiC power MOSFETs and a fresh family of 90 A SBDs, the MSC090SDA330, Microchip is seeking to address the challenges presented by the ever-increasing voltage and power requirements of today’s transportation, renewable energy, aerospace and industrial systems. 

Not long ago, electric vehicles (EVs) began to sport 400 V power rails, and the industry answered with 700 V MOSFETS. Now, 1200 V MOSFETs are needed to provide proper safety margins for 800 V systems; Electrified trains and trucks incorporate vehicle traction power units (TPUs) that draw far more current than passenger EVs do, and they operate with higher voltages; Large scale solar farms, too, often operate at voltages on the order 1500 V.


Microchip’s Solution

Microchip has introduced its MSC025SMA330 and MSC090SDA330 lines to meet that rising bar for high-voltage systems. The new devices join Microchip’s existing array of 700, 1200 and 1700 V SiC devices, which includes die, discretes, modules and digital gate drivers. They are available in die or package form, allowing engineers maximum design flexibility.


Microchip introduced its 1700 V SiC MOSFETs last July. Image used courtesy of Microchip

Per Leon Gross, vice president of Microchip’s discrete product business unit, that flexibility was a key developmental focus for the company.

“We focus on developments that provide our customers the ability to quickly innovate systems,” Gross said. “Our new family of 3.3 kV SiC power products allows customers to move to high-voltage SiC with ease, speed and confidence.” 


Addressing Supply Chain Uncertainty

Microchip will produce the new devices at its foundry in Colorado Springs, Colorado, in addition to other remote sites. That varied production should provide OEMs some piece of mind regarding future part availability, regardless of external circumstances. 

For further assurance, Microchip also backs its products with its customer-driven obsolescence practice. Under the policy, Microchip guarantees that it will produce devices so long as there is need, regardless of the product’s age.


For those who need AEC-Q101 qualified SBDs, Microchip introduced 700 and 1200 V SiC models in 2020. Image used courtesy of Microchip 


So even in the face of supply chain delays, the company will continue to provide its customers with the parts they need. 


Microchip’s 3300 V SiC MOSFET can handle a maximum of 104 A continuously or 240 A pulsed, yet features a maximum zero gate voltage drain current of only 100 µA.

Important Dynamic Characteristics

  • Input capacitance: 8720 pF
  • Reverse transfer capacitance: 11 pF
  • Output capacitance: 194 pF
  • Total gate charge: 410 nC
  • Gate source charge: 138 nC
  • Gate drain charge: 133nC
  • Gate equivalent series resistance: 0.4Ω at 1 MHz

Body Diode Characteristics

  • Reverse recovery time: 35 ns
  • Reverse recovery charge: 4400 nC
  • Reverse recovery current: 210 A


  • Vehicle traction power units (TPUs)
  • Auxiliary power units (APUs)
  • Solid-state transformers (SSTs)
  • Industrial motor drives
  • Energy infrastructure 

Physical Considerations

  • The MSC025SMA330 can operate over a junction temperature range of -55 to 150 ℃ 
  • RoHS-compliant


The MSC090SDA330 SBD

In its two-lead T-Max packaged form, the 3300 V, 90 A SiC SBD can handle repetitive and non-repetitive peak forward surge currents (tp = 8.3 ms, half sine wave) of 258 and 615 A, respectively. There is no reverse recovery time, and at 25 ℃, maximum power dissipation is 1500 W.


An illustration of the SBD's T-Max package. Image used courtesy of Microchip 


Static Characteristics (typical) at 25 ℃ 

  • Forward voltage at 90A: 2.1 V
  • Reverse leakage current at 3300 V: 15 µA
  • Total capacitive charge at 1600 V: 927 nC
  • Junction capacitance at 2200 V at a 1 MHz frequency: 256 pF


  • Power factor correction
  • Free-wheeling diode
  • Anti-parallel diode
  • Snubber/clamp diode


  • The MSC090SA330 can operate over a junction temperature range of -55 to 175 ℃ 
  • RoHS-compliant


Feature image used courtesy of Microchip