onsemi Says its 650 V SiC MOSFET is Market’s First in a TOLL Package
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard seven-lead D2PAK-7 packages.
Introduced last Tuesday at PCIM Europe 2022 in Nuremberg, Germany, the NTBL045N065SC1 is a 650 V silicon carbide (SiC) power semiconductor that sports an RDS(ON) of 33 mΩ (typical) and a maximum drain current of 73 A. With a footprint of just 9.90 x 11.68 mm and a height of 2.3 mm, the new device occupies 60% less volume than a D2PAK-packaged unit.
The NTBL045N065SC1 is offered in a TO-leadless (TOLL) package. Image used courtesy of onsemi
The new, smaller power transistor satisfies the needs of designs requiring high levels of power density. In addition, the TOLL package offers lower package inductance (2 nH) and better thermal performance than D2PAK-based devices. Its Kelvin source configuration allows for lower switching losses than non-Kelvin units, leading to a 60% reduction in turn-on loss (EON) as well as lower gate noise and improved EMI performance.
The Need for Reliable, Denser High-power Devices
SiC devices offer important advantages over last-generation silicon (Si) power semiconductors. Their ability to switch at much higher frequencies allows for smaller passive filtering components, saving space and weight and improving efficiency. And with market demand high, onsemi is looking to take advantage, said Asif Jakwani, senior vice president and general manager at onsemi’s Advanced Power Division.
“The ability to deliver highly reliable power designs in a small space is becoming a competitive advantage in many areas, including industrial, high performance power supplies and server applications,” Jakwani said.
onsemi introduced the TBL045N065SC1 at PCIM Europe 2022 in Nuremburg, Germany. Image used courtesy of Mesago Messe Frankfurt GmbH/Klaus Mellenthin
onsemi strongly hints that the TBL045N065SC1 is only the first SiC power semiconductor that it will offer in TOLL packages. The company also staked its claim as the only “vertically integrated” supplier of SiC devices offering SiC boule growth, substrate, epitaxy and device fabrication from a single source, making it well-positioned to produce additional offerings quickly.
- Gate-to-source (g-s) ratings: 8 to +22 V (5 to 18 V recommended)
- Power dissipation: 346 W
- Pulsed drain current: 182 A
- Junction to case: 0.43 ℃/W
- Junction to ambient: 43 ℃/W
- Zero gate voltage drain current: 10 µA at 25℃, 1 mA at 175℃
- Gate to source leakage current: 250 nA
Capacitances and Charges
- Input capacitance: 1870 pF
- Output capacitance: 162 pF
- Reverse transfer capacitance: 14 pF
- Total gate charge (QG): 105 nC
- Gate to source charge: 27 nC
- Gate to drain charge: 30 nC
- Turn-on delay time: 13 ns
- Rise time: 14 ns
- Turn-off delay time: 26 ns
- Fall time: 7 ns
- Turn-on switching loss: 47 µs
- Turn-off switching loss: 33 µs
- Total switching loss: 80 µs
onsemi’s fresh TOLL-packaged 650 V SiC MOSFET will find application in solar inverters, servers, telecom, switching mode power supplies (SMPS), uninterruptible power supplies (UPS), and energy storage.
The NTBL045N065SC1 is Pb, halogen, and BFR–free. It is also RoHS-compliant.
This latest offering has a temperature range of -55 to 175 ℃, and its TOLL package offers moisture sensitivity level 1 (MSL 1).