The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN…
The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon…
Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base…
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than…
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than traditional silicon solutions.
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