Latest Gallium Nitride Technical Articles

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…

This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology…

This article discusses the method of increasing packing density of power electronics using Chip-on-Heatsink Technology for better thermal management.

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics…

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor…

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…

This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…

This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies…

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better…

This article discusses the expanding markets for GaN technology and offers some insights and reasons why it is better than their silicon-counterparts.