Latest Semiconductors New Products

STMicroelectronics has introduced a 100V power MOSFET manufactured with advanced STPOWER STripFET F7 technology and…

STMicroelectronics has introduced a 100V power MOSFET manufactured with advanced STPOWER STripFET F7 technology and housed in an H2PAK package. The…

The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…

The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…

Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON)…

Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON) of just 0.54 mΩ at a…

The fresh gate drivers for brushless DC (BLDC) motors are three-phase and sensorless, and each incorporates a power loss…

The fresh gate drivers for brushless DC (BLDC) motors are three-phase and sensorless, and each incorporates a power loss brake and AC-loss features.

The fresh additions consist of 45, 60, 100, and 200–V rectifiers, available in both automotive-qualified and standard…

The fresh additions consist of 45, 60, 100, and 200–V rectifiers, available in both automotive-qualified and standard versions, all of which are…

ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…

ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…

The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…

The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…

The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…

The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters…

The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters deployed in EVs,…

The fresh diodes “set new benchmarks” for current density in their class, the company says.

The fresh diodes “set new benchmarks” for current density in their class, the company says.

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…

The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…

The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr),…

The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr), ROHM says, via faster…

The new power delivery solution, coined ALTA, combines digitally-controlled RF power supplies with an accurate digital…

The new power delivery solution, coined ALTA, combines digitally-controlled RF power supplies with an accurate digital impedance matching network.

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…

The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…

The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…

The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.

The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…

The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.