Diodes Incorporated Debuts New 40 V, 460 A MOSFET Targeting EVs
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON) of just 0.54 mΩ at a gate drive of 10 V.
Unveiled last Wednesday, Diodes Incorporated’s fresh DMTH4M70SPGWQ MOSFET sports the power necessary to satisfy the modern EV marketplace while taking up less board space than competing devices, lending it what the company says is industry-leading performance. It is the first product to be released in Diodes Incorporated's new PowerDI8080-5 package.
The DMTH4M70SPGWQ in the space-saving PowerDI8080-5 package. Image used courtesy of Diodes Incorporated
Per company documentation, the device’s excellent specs for gate charge and RDS(ON) combine to offer an industry-best figure of merit. The n-channel, enhancement mode MOSFET features low input capacitance for fast switching speeds, while 100% unclamped inductive switching (UIS) testing ensures superior reliability.
The PowerDI8080-5 Package — Advantages
The PowerDI8080-5 Package sports a PCB footprint of 64 mm2, a full 40% less than the popular TO263 (D2PAK) package format. The package has an off-board profile of 1.7 mm, which is also lower than that of the TO263, by 63%.
The PowerDI8080-5 Package sports a PCB footprint of 64 mm2. Screenshot used courtesy of Diodes Incorporated
The PowerDI8080-5 features a copper clip bonding between the die and the terminals, which facilitates an exceptional junction-to-case thermal resistance of 0.36 °C/W. This enables the PowerDI8080-5 to handle currents up to 460 A and deliver eight times the power density capable with a TO263 package, the company said in its product announcement.
Below, in the sections, “Maximum Ratings,” “Thermal Characteristics,” “OFF Characteristics,” and “Dynamic Characteristics,” the specifications are often subject to a myriad of additional conditions defined in the data sheet. The reader is advised to consult that vital document before making purchasing decisions.
The DMTH4M70SPGWQ can tolerate maximum gate-source voltages of ±20 V. Maximum pulsed drain current—for 10 µs pulse at a 1% duty cycle—is 1840 A.
Thermal resistance, junction-to-case, is 0.35 °C/W. For thermal resistance, junction-to-ambient, the specification is 27 °C/W.
Zero gate-voltage drain current is specified at a maximum of 1 μA, and maximum gate-source leakage current is ±100 nA.
- Input capacitance: 10053 pF
- Output capacitance: 5796 pF
- Reverse transfer capacitance: 116 pF
- Total gate charge: 117.1 nC
- Gate-source charge: 37.7 nC
- Gate-drain charge: 10.9 nC
- Turn-On delay and rise times are 29.8 ns and 39.7 ns, respectively
- Turn-Off delay and fall times are 99.8 ns and 49.0 ns, respectively
The DMTH4M70SPGWQ will enable designers to maximize system efficiency while keeping power dissipation to a minimum, Diodes Incorporated says, in applications such as:
- Automotive high-power BLDC motor drives
- DC-DC converters
- EV charging systems
A typical application schematic is depicted below:
A typical application schematic for the DMTH4M70SPGWQ. Screenshot used courtesy of Diodes Incorporated
Additional applications include:
- Engine management systems
- Body control electronics
The DMTH4M70SPGWQ is RoHS-compliant with a lead-free finish. It is also a halogen and antimony–free, “green” device.
This new MOSFET is AEC-Q101 qualified. It can meet production part approval processes (PPAP), and is manufactured in IATF 16949-certified facilities.
The unit operates over a temperature range of -55 to + 175 ℃. Per Diodes Incorporated’s release, the unit’s gull wing leads lower manufacturing costs by facilitating optical inspection (AOI), and also improve temperature cycling reliability. In addition, the device sports moisture sensitivity at Level 1 per J-STD-020.