STMicroelectronics Releases Two Series of MDmesh Silicon Power MOSFETs

Introduced early last week at PCIM Europe 2022, the 600 V STP60N043DM9 and 650 V STP65N045M9 are the first members of the MDmesh DM9 and M9 series, respectively. Both devices feature low RDS(ON)s per unit area, maximizing power density and saving precious board space, in addition to typical gate charges (Q_g) of only 80 nC.

 

The STP60N043DM9 and STP65N045M9. Screenshot used courtesy of STMicroelectronics

 

With maximum RDS(ON)s of 45 mΩ for the STP65N045M9 and 43 mΩ for the STP60N043DM9, ST claims the fresh offerings sport best-in-class RDS(on)max x Q_g figures of merit (FoM).

 

More Key Advantages

Gate threshold voltages of 3.7 V for the STP65N045M9 and 4 V for STP60N043DM9 serve to minimize both turn-on and turn-off switching losses when compared to members of the earlier MDmesh M5, M6 and DM6 series. The two new devices also offer decidedly low reverse recovery times (trr) and reverse recovery charges (Q_rr), serving to further improve the devices’ switching performances and efficiencies, STMicroelectronics said in its release. 

What’s more, these first units feature — as will subsequent members of the MDmesh M9 and DM9 series — an additional platinum diffusion process that ensures a fast intrinsic body diode. There is as well an improved peak diode-recovery slope (dv/dt) and, at 400 V, the fresh offerings can withstand dv/dt rates of up to 120 V/ns. 

 

Absolute Maximums

For both the STP65N045M9 and the STP60N043DM9:

• Rated at maximum G-S voltages of ±30 V
• MOSFET dv/dt ruggedness is specced at 120 V/nS
• Total Power dissipation is 245 W
   

STP60N043DM9, specific:

• Continuous Drain Current: 56 A
• Pulsed Drain Current: 175 A
   

STP65N045M9, specific:

• Continuous Drain Current: 55 A
• Pulsed Drain Current: 170 A

 

Thermal Data

For both devices:

• Thermal resistance, junction-to-case: 0.51 °C/W
• Thermal resistance, junction-to-ambient: 62.5 °C/W

 

On and Off States

Both units offer:

• Zero gate voltage drain current at the individual device’s maximum drain-source voltage: 200 μA
• Gate to body leakage current: ±100 nA

 

Dynamic Characteristics

For the STP60N043DM9, dynamic characteristics are as follows:  

 

STP60N043DM9 — Dynamic Characteristics. Screenshot used courtesy of STMicroelectronics

 

And for the STP65N045M9: 

 

STP65N045M9 — Dynamic Characteristics. Screenshot used courtesy of STMicroelectronics

 

Switching Times

For the STP60N043DM9, switching time characteristics are as follows: 

 

STP60N043DM9 — Switching Time Characteristics. Screenshot used courtesy of STMicroelectronics

 

And for the STP65N045M9: 

 

STP65N045M9 — Switching Time Characteristics. Screenshot used courtesy of STMicroelectronics

 

Applications

• High efficiency switching power supplies (SMPS)
• LLC resonant converters
• Data-center servers
• 5G infrastructure
• Flat-panel televisions

 

Physical Considerations

• These MDmesh Silicon Power MOSFETS operate over a junction temperature range of -55 to 150 ℃
• The devices are available in TO-220 packages

 

Feature image used courtesy of STMicroelectronics