By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than 3,500, expanding circuit…
By adding models for its silicon carbide and IGBT devices, ROHM has expanded its library of LTspice models to more than 3,500, expanding circuit…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET…
The company is expanding its presence in the wide bandgap semiconductor market with advancements in its FET and MOSFET product lines.
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride…
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
High-energy and power-dense supercapacitor technologies from Kyocera AVX and Littelfuse help with power management and…
High-energy and power-dense supercapacitor technologies from Kyocera AVX and Littelfuse help with power management and extend operating times for…
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip…
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip Semiconductor deliver automotive…
The device from Toshiba offers an exceptionally low on-resistance to help miniaturize power electronics. This article…
The device from Toshiba offers an exceptionally low on-resistance to help miniaturize power electronics. This article will examine the…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power…
The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor…
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
Facebook
Google
GitHub
Linkedin