HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
Power electronics manufacturer Eggtronic recently announced a new AC wireless power hybrid technology.
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
This article highlights Murata MGJ2 DC-DC converters exhibit an ultra-low isolation capacitance of just 3pF (typical).
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz…
Delivering the power of a quarter-brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly,…
For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained…
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Facebook
Google
GitHub
Linkedin