The DE500 and DE1000 extend the BBA300 family to 1 to 6 GHz in single-band operation
The DE500 and DE1000 extend the BBA300 family to 1 to 6 GHz in single-band operation
The RMR and RBE series match driver ICs and transformers and are designed for discrete isolated DC-DC power supply designs
The RMR and RBE series match driver ICs and transformers and are designed for discrete isolated DC-DC power supply designs
The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package,…
The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package, targeting appliances and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The TC75W series features faster propagation delay and targets robots, PV inverters, and UPS systems with rail-to-rail…
The TC75W series features faster propagation delay and targets robots, PV inverters, and UPS systems with rail-to-rail input/output and 1.8 V…
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package,…
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package, reducing BOM count and…
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges…
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges in server and automotive…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in…
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in robotics, AI data centers, and…
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
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