GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in…
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in robotics, AI data centers, and…
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20 ARMS for humanoid joint…
The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device…
The ST2000JXH35A raises validated turn-off and short-circuit test voltage to 4.5 kV, targeting reduced series device counts in high-voltage…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
The ACS37017 isolated sensor targets drift reduction and precision feedback in high-voltage power conversion systems and…
The ACS37017 isolated sensor targets drift reduction and precision feedback in high-voltage power conversion systems and offers a sensitivity error…
OmniOn Power, Recom, and Navitas Semiconductor have launched DC-DC platforms to deliver versatility in efficient power design.
OmniOn Power, Recom, and Navitas Semiconductor have launched DC-DC platforms to deliver versatility in efficient power design.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and…
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and noise immunity.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
Magnachip’s 650 V and 1200 V discrete devices target inverter and ESS designs from residential through industrial power levels.
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