The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…
Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
The PFE1500FB series accepts 85 to 305 VAC input and features a metal baseplate for sealed enclosures and liquid-cooled systems.
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…
The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package,…
Geehy's GHD144xT integrates a bootstrap diode into a 200V half-bridge gate driver housed in a compact SOP8 package, reducing BOM count and…
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges…
STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges in server and automotive…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in…
At APEC 2026, pSemi launched a 72 W DC-DC converter module to deliver ultra-thin, high-efficiency power delivery in robotics, AI data centers, and…
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20 ARMS for humanoid joint…
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