The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce…
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting;…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
New device completes Microchip’s family of Vref products providing increased reliability and AEC-Q100 qualification.
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
The new package enables EM/IR assessment of analog, digital, and mixed-signal IC designs of any size before committing to silicon.
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