The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The SIDACtor series from Littelfuse will provide protection for exposed interfaces in industrial and information…
The SIDACtor series from Littelfuse will provide protection for exposed interfaces in industrial and information communications technology (ICT)…
The surface-mounted devices are available with capacitances of 47 to 10,000 µF and voltage ratings from 6.3 to 100 VDC.
The surface-mounted devices are available with capacitances of 47 to 10,000 µF and voltage ratings from 6.3 to 100 VDC.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The new MOSFETs sport RDS(ON)s of 25mΩ, while the SBDs handle an industry leading 90 amps.
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The regulator features a noise level of only 0.46 µVRMS, with exceptionally high power-supply ripple rejection (PSRR).
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they…
The new fuses are aimed specifically at the harsh automotive environments of modern electric vehicles (EVs), where they have been designed to…
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
The new units are designed to lower the total costs associated with today’s new generation of low earth orbit (LEO) satellites.
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s…
Taking up a scant 64 mm2 with a height of 0.9 mm in DFN8x8 packages, the new devices are aimed at meeting today’s demands for high efficiency and…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The AOZ32034AQV from Alpha and Omega Semiconductor is a highly integrated half-bridge power stage that lowers both the…
The AOZ32034AQV from Alpha and Omega Semiconductor is a highly integrated half-bridge power stage that lowers both the BOM and design time for…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature,…
Kyocera AVX in February added a new 470 µF/125V code to its TWA-Y series, COTS-Plus line of high-temperature, long-living capacitors.
The controller, when paired with a P-channel MOSFET configured as an ideal diode, provides the high-side rail isolation…
The controller, when paired with a P-channel MOSFET configured as an ideal diode, provides the high-side rail isolation needed for reverse current…
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