Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

Gallium nitride (GaN) high electron mobility transistors (HEMTs) feature higher switching frequencies and lower “ON” voltages then legacy silicon-based devices can offer. With e2v HiRel’s new space-screened GaN e-mode transistors, the TDG650E601TSP and TDG650E602TSP, designers of space-based systems can enjoy similar advantages.

 

In both new transistors, the thermal pad is internally connected to pin 3 and substrate. Image used courtesy of Teledyne e2v HiRel

 

Both products are enhancement mode, top-side cooled GaN-on-silicon power transistors, but they differ significantly in the maximum transient drain-to source voltage that they can tolerate; The TDG650E602TSP can tolerate 750 V, while the TDG650E601TSP packs a tolerance of 900 V.

 

Answering Customer Demand 

Per Mont Taylor, Teledyne e2v HiRel’s vice president of business development, the company’s GaN HEMT product family has proved popular with its customers, who called attention to the need for similar versions with standard space screening. Both the TDG650E602TSP and TDG650E601TSP were devised to meet those needs.

“Our new 650 V, 60 A parts offer 100% screening off-the-shelf, and we can do full level 1 qualification with customer SCDs,” Taylor said. 

 

Notable Features

Both units feature typical RDS(ON)s of 25 mΩ, ensuring very little energy will be wasted as heat. The units can also switch at speeds of greater than 10 MHz, which allows for small and light filtering components.

An Island Technology cell layout realizes high-current die and high yield, while GaNPX packaging facilitates both low inductance and low thermal resistance in a small form factor.

As top-side cooled semiconductors, both new transistors offer very low junction-to-case thermal resistances, a critical specification for the demands of high-power, space-based applications.

 

Absolute Maximums 

• Both devices can handle maximum pulse drain currents of 120 A for 1 µsecond.
• Maximum transient drain-to-source voltages are 900 V and 750 V for the TDG650E601TSP and the TDG650E602TSP, respectively
• Both GaN transistors can handle 60 A continuous current. At a case temperature of 100 ℃, the TDG650E601TSP’s continuous capacity declines to 41 A, while the TDG650E602TSP’s capacity is reduced to 47 A

 

Thermal Resistance 

Maximum topside junction-to-case thermal resistance for the TDG650E601TSP is 0.35 °C/W; The TDG650E602TSP comes in at 0.27 °C/W.

 

Driving the Gate 

For optimal RDS(on) performance, the recommended gate drive voltage range, VGATE_SOURCE, is 0  to + 6 V. The maximum allowable VGATE_SOURCE (AC), is +7 to -10 V, and the device can survive non-repetitive transients of up to +10 V and – 20 V for pulses up to 1 μs. These specifications make it possible for designers to employ either 6 V or 6.5 V gate drive settings. 

 

Sourcing

Both devices are available via EAR99 or European sourcing 

 

Applications 

• Traction drives
• Space motor drives
• DC-DC converters
• Battery management
• Bridgeless Totem Pole power factor correction (PFC)

 

​​​​Physical Considerations

• The TDG650E602TSP and the TDG650E601TSP operate over a temperature range of −55 to +125 °C
• They are available in a top-cooled, low inductance GaNPX package with a 9 x 7.6 mm PCB footprint

 

Feature image used courtesy of NASA/JPL