Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce…
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
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