Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to bring efficiency and high…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
Patented technologies from new market entrant QPT enable GaN circuits to operate at frequencies as high as 20 MHz,…
Patented technologies from new market entrant QPT enable GaN circuits to operate at frequencies as high as 20 MHz, unleashing new performance…
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Transphorm has released the Verilog model and datasheet for its first-ever 1200 V GaN-on-Sapphire power transistor.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
Advancing power electronics is one of the keys to increasing EV and power system efficiencies while reducing costs.
Efficient Power Conversion has created a three-phase motor drive inverter that provides smoother, quieter operation and…
Efficient Power Conversion has created a three-phase motor drive inverter that provides smoother, quieter operation and higher efficiency.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
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