The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The company’s new converter is a quasi-resonant (QR) flyback controller incorporating 650 V E-mode GaN transistors.
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard…
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power…
The new ICs enable designers to meet tough new efficiency requirements, while at the same time realizing excellent power factor correction (PFC).
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified…
The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V…
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of…
The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global…
hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce…
Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting;…
AEC-Q100 qualified, high efficiency driver for automotive and high-reliability DC input industrial and medical lighting; Hysteretic control…
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The new AEC-Q100 qualified device offers high reliability and low drift over an extended temperature range.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
The two power supply unit (PSU) designs offer either full bridge LLC resonant converter or bridgeless totem-pole PFC formats.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
The unit offers a 300mA battery charger, three independent power rails, and a separate LDO output.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
The first series member is a highly integrated half-bridge device aimed at wireless charging applications.
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