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Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

Teledyne e2v HiRel’s New 650 V, 60 A GaN HEMTs are Space-screened at NASA’s Top Assurance Level

The two new transistors are tested through NASA’s Level 1 screening flow, its most stringent set, and can be qualified to NASA’s full Level 1…


Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

Teledyne e2v HiRel Releases a 100 V Transistor Driver for 20 MHz FET and GaN Transistors

The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…


Eggtronic Unveils a New Demo Board Aimed at Streamlining the Design of Compact, Efficient 35 W Adapters and Chargers

Eggtronic Unveils a New Demo Board Aimed at Streamlining the Design of Compact, Efficient 35 W Adapters and Chargers

The new board employs the company’s proprietary EcoVoltas QuarEgg+ technology, and can be specified with either a GaN or Silicon FET.


EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

EPC Space Expands its Rad-Hard GaN Offerings With New Demo Boards

The five easy-to-use demonstration boards will allow engineers to more quickly exploit the capabilities of radiation-hardened (RH) gallium nitride…


Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

Power Integrations Claims its New AEC-Q100 Qualified Switcher ICs Are First to Incorporate a SiC MOSFET

The devices can efficiently deliver power to battery and fuel-cell passenger EVs, in addition to electric buses and trucks.


Power MOSFET Package Enables Innovative Source-Down

Power MOSFET Package Enables Innovative Source-Down

New OptiMOS™ power MOSFET package enables innovative Source-Down technology for PQFN 3.3 x 3.3 mm2 in 25 V to 100 V variants.


ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s Silicon-Carbide Power Devices for E-Mobility and Energy-Efficient Industry

ST’s latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability for…


hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain and VisIC Technologies develop 3-Level 800V GaN inverter

hofer powertrain, a globally leading automotive powertrain technology company, and VisIC Technologies Ltd., a global leader in gallium nitride…


ROHM’s New Compact Surface Mount 45W Output AC/DC Converter ICs: Equipped with Integrated High Voltage SJ MOSFET

ROHM’s New Compact Surface Mount 45W Output AC/DC Converter ICs: Equipped with Integrated High Voltage SJ MOSFET

Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.


Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices Announces 1200V, 100A Power Modules

Solitron Devices is pleased to announce the introduction of the SD11906, SD11907, SD11956 and SD11957 1200V Silicon Carbide (SiC) Half Bridge…


Allegro Debuts a 3-Phase Gate Driver IC Purposed to Reduce EV Noise Levels

Allegro Debuts a 3-Phase Gate Driver IC Purposed to Reduce EV Noise Levels

The new unit is aimed at sensorless, brushless DC (BLDC) motors operating over a 5V to 50V voltage range.


Sungrow’s String Inverter Employs Infineon Module and Chip Technology

Sungrow’s String Inverter Employs Infineon Module and Chip Technology

The 352kW, 1500 VDC Sungrow device offers a 40% increase in output power when compared to the company’s previous best.


Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba Unveils New Simulation Technology Accu-ROM to Reduce Semiconductor Verification Time

Toshiba has recently developed a new model-based development (MBD) simulation technology that can reportedly reduce verification times for…


EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.


STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

The new super-junction power MOSFETs offer the best available figures of merit for RDS(on) x Area of any 800V device on the market.


EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…


40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro MicroSystems's A89307 offers ultra-low noise and vibration by using a Field Oriented Control (FOC) algorithm to drive continuous…


Infineon Enables Highly Integrated USB Type-C Charger Unification

Infineon Enables Highly Integrated USB Type-C Charger Unification

The EZ-PD™ BCR (Barrel Connector Replacement) is a highly integrated USB-C controller, together with the USB-C connector, it replaces barrel…