Bourns says its new trench-gate, field-stop technology IGBTs will offer market-leading efficiency coupled with reliable supply and reduced lead…
Bourns says its new trench-gate, field-stop technology IGBTs will offer market-leading efficiency coupled with reliable supply and reduced lead…
Keysight Technologies’ PathWave Advanced Design System (ADS) and PEPro offer a simulation environment for designing…
Keysight Technologies’ PathWave Advanced Design System (ADS) and PEPro offer a simulation environment for designing switched-mode power supplies…
A high-voltage supply from Dean Technology, an industrial/medical supply from Advanced Energy, and an external medical…
A high-voltage supply from Dean Technology, an industrial/medical supply from Advanced Energy, and an external medical supply from XP Power…
The new BiCMOS device contains two operational amplifiers in a single package and operates with 4-36 V voltage sources.
The new BiCMOS device contains two operational amplifiers in a single package and operates with 4-36 V voltage sources.
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon…
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
The company says its fresh DFN MOSFETs, which measure 0.63 x 0.33 x 0.25 mm, are the world’s smallest.
The company says its fresh DFN MOSFETs, which measure 0.63 x 0.33 x 0.25 mm, are the world’s smallest.
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
Learn the benefits derived from the adoption of a modular approach based on ACEPACK SMIT with respect to the traditional…
Learn the benefits derived from the adoption of a modular approach based on ACEPACK SMIT with respect to the traditional trough-hole discrete one.
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules…
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules designed specifically for…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
Advanced semiconductor technology delivers unprecedented precision and control to HVDC transmission systems, including…
Advanced semiconductor technology delivers unprecedented precision and control to HVDC transmission systems, including traction converters that…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON)…
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON) of just 0.54 mΩ at a…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
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