The company says its fresh DFN MOSFETs, which measure 0.63 x 0.33 x 0.25 mm, are the world’s smallest.
The company says its fresh DFN MOSFETs, which measure 0.63 x 0.33 x 0.25 mm, are the world’s smallest.
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
Aimed at industrial applications, the new device from Alpha and Omega Semiconductor delivers output voltages of up to 5.5 V.
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down…
The industrial and consumer market is requiring increased power density for DC/DC converters that have high step-down ratios and use high…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
Learn the benefits derived from the adoption of a modular approach based on ACEPACK SMIT with respect to the traditional…
Learn the benefits derived from the adoption of a modular approach based on ACEPACK SMIT with respect to the traditional trough-hole discrete one.
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules…
Leapers Semiconductor, a developer and manufacturer of SiC power modules, has introduced its HPD series SiC power modules designed specifically for…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost…
The latest controller chip from STMicroelectronics incorporates an Arm Cortex-M0+ core and is designed to boost efficiency in USB-PD 3.1 adapters.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
Advanced semiconductor technology delivers unprecedented precision and control to HVDC transmission systems, including…
Advanced semiconductor technology delivers unprecedented precision and control to HVDC transmission systems, including traction converters that…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio…
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also…
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON)…
Housed in a new high-current, thermally-efficient package, the unit sports a gate charge of 117 nC and a typical RDS(ON) of just 0.54 mΩ at a…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will…
ST’s STPOWER MDmesh M9 and DM9 series feature N-channel super-junction multi-drain silicon power MOSFETs that will offer what ST says are the…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices…
The new N-channel power MOSFET, housed in its TO-leadless (TOLL) package, requires 30% less board space than devices supplied in standard…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo…
The six FETs, members of the fresh UF4C/SC series, feature industry-leading marks for on-resistance, claims Qorvo (formerly UnitedSic), and target…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters…
The fresh IGBT/SiC gate-driver family, SCALE EV, is purposed to drive the high-powered automotive and traction inverters deployed in EVs,…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition…
The probe and accompanying Power-Device software, in tandem with the company’s proven 12-bit high definition oscilloscopes, provide sharp…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
Facebook
Google
GitHub
Linkedin