In this roundup, we highlight three developments from Diodes Incorporated, Waymo, and the transportation department that are making cars and…
In this roundup, we highlight three developments from Diodes Incorporated, Waymo, and the transportation department that are making cars and…
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
The new power product lineup includes a 1200 V IGBT and a next-gen MOSFET for solar and smartphones, respectively.
This roundup spotlights new inductors designed to reduce sources of inefficiency in modern power supplies.
This roundup spotlights new inductors designed to reduce sources of inefficiency in modern power supplies.
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
Electric vehicles need components that can withstand extreme temperatures and harsh weather conditions. Alpha and Omega…
Electric vehicles need components that can withstand extreme temperatures and harsh weather conditions. Alpha and Omega Semiconductor’s new…
Ambarella has announced that it has co-developed a new neural network processing stack and chip family for AI computing…
Ambarella has announced that it has co-developed a new neural network processing stack and chip family for AI computing in autonomous vehicles.
The RVCA thick film, high-voltage chip resistor series from Stackpole Electronics is AEC-Q200 qualified and designed for…
The RVCA thick film, high-voltage chip resistor series from Stackpole Electronics is AEC-Q200 qualified and designed for the demanding requirements…
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Diodes Incorporated has expanded its silicon carbide product portfolio with the first-ever 1200 V SiC MOSFET in a TO247-4 package.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC…
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
MPS offers a suite of isolated solutions designed to meet stringent high-power requirements. These solutions include…
MPS offers a suite of isolated solutions designed to meet stringent high-power requirements. These solutions include isolated gate drivers,…
Infineon, Power Integrations and Microchip have each introduced solutions to ease brushless DC motor (BLDC) control this month.
Infineon, Power Integrations and Microchip have each introduced solutions to ease brushless DC motor (BLDC) control this month.
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is…
EPC’s (Efficient Power Conversion) new GaN FET targets space-based applications, while GaN Systems’ new offering is aimed at terrestrial…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25…
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr),…
The seven 600 V members constituting the new R60xxVNx series deliver their industry-leading reverse recovery times (trr), ROHM says, via faster…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with…
The eight new discrete chips employ the company’s .XT interconnect technology, and were released together with additions to the company’s…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4…
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
Separately driving the high-side and low-side FETs of each half-bridge allows users to configure the output channels…
Separately driving the high-side and low-side FETs of each half-bridge allows users to configure the output channels independently, and drive a…
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The two new families will serve to enhance energy efficiency, in addition to saving weight and board space.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.
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