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Tektronix Intros Wideband Shunts and High Voltage Differential Probe

Tektronix Intros Wideband Shunts and High Voltage Differential Probe

The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement coverage from precision…


Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Third Generation SiC MOSFETs for Highly Efficient EV Drivetrains

Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…


Briefs: Shaping the Future in Solar, Hydro, EVs, and Space

Briefs: Shaping the Future in Solar, Hydro, EVs, and Space

Qcells, Voith, the Missouri University of Science and Technology, and Nexperia and IAV are pushing boundaries in space technology, solar cells,…


News Jun 18, 2026 by Karen Hanson
More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

More Power, More Tokens: How SSTs Are Reshaping Data Center Infrastructure

The transition from AC distribution to the 800 V DC architecture is reshaping the data center power infrastructure, boosting token generation and…


Onsemi Unveils Interactive Web Tool to Simplify Power Design

Onsemi Unveils Interactive Web Tool to Simplify Power Design

The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…


Infineon Intros 1300 V SiC Module Capable of 205°C Continuous Operation

Infineon Intros 1300 V SiC Module Capable of 205°C Continuous Operation

A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…


800 V SiC Power Module With Integrated Current Measurement

800 V SiC Power Module With Integrated Current Measurement

Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…


GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

GaN Motor Drive Evaluation Boards: EPC9186HC2/HC3 and EPC91202

Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…


Solution-based Manufacturing Platform for Advanced WBG Technologies

Solution-based Manufacturing Platform for Advanced WBG Technologies

Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…


Analysis of Rad-Hard GaN Half-Bridge Power Stages for High-Rel Buck Converters

Analysis of Rad-Hard GaN Half-Bridge Power Stages for High-Rel Buck Converters

In this article, we analyze how monolithic GaN solutions and driver optimization maximize efficiency and power density in high-reliability space…


Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Sensor Placement Errors in High-Voltage Systems That Distort Measurements

Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…


Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

Advancing Power Efficiency With SiC Merged-Pin Schottky (MPS) Diodes

By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…


Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Why Oscilloscope Bandwidth Specs Are Often Misleading for HV Measurement

Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.


GaN Goes Power Mainstream—Insights from EPC’s Nick Cataldo at APEC 2026

GaN Goes Power Mainstream—Insights from EPC’s Nick Cataldo at APEC 2026

GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN system-level value and…


Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…


Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…


Rad-Hard GaN MOSFETs Beat Silicon Alternatives for Satellite Designs

Rad-Hard GaN MOSFETs Beat Silicon Alternatives for Satellite Designs

Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…


Infineon Unveils Isolated Gate Drivers With Opto-Emulator Input for SiC

Infineon Unveils Isolated Gate Drivers With Opto-Emulator Input for SiC

The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.


new products Mar 17, 2026 by Charles Lee
Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…


Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept…