The new system-in-package integrates two 650 V GaN transistors and a dedicated high-frequency gate driver, boosting power density in adapters,…
The new system-in-package integrates two 650 V GaN transistors and a dedicated high-frequency gate driver, boosting power density in adapters,…
Combining Mitsubishi Electric J3-Series 1300V SiC power modules with Mersen low-inductance laminated busbars to achieve…
Combining Mitsubishi Electric J3-Series 1300V SiC power modules with Mersen low-inductance laminated busbars to achieve high power density,…
The SDM100G series of desktop power adapters blends GaN technology with versatile USB-C Power Delivery (PD) to streamline…
The SDM100G series of desktop power adapters blends GaN technology with versatile USB-C Power Delivery (PD) to streamline system design for modern…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes efficiency, driving higher…
Discover how optimizing gate resistance and adding RC snubber networks can effectively suppress gate voltage oscillations…
Discover how optimizing gate resistance and adding RC snubber networks can effectively suppress gate voltage oscillations and overshoots during GaN…
The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply…
The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
Learn how Littelfuse, Daimler Truck AG, and the Steinbeis Institute validated a non-isolated power module architecture…
Learn how Littelfuse, Daimler Truck AG, and the Steinbeis Institute validated a non-isolated power module architecture that cuts IGBT junction…
In this interview article, we learn about EPC’s Gen 8 GaN platform for AI power delivery and Trinity motor control—on…
In this interview article, we learn about EPC’s Gen 8 GaN platform for AI power delivery and Trinity motor control—on display this week at PCIM…
This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and…
This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and streamline mission-specific…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both GaN HEMTs and logic-level…
Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for…
Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for multi-kilowatt GPUs and emerging 800 V…
Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…
Learn why high-frequency SiC switching can distort EV inverter efficiency results and how a…
Queen’s University Belfast, Hyundai Motor Group, SK On, Terra Innovatum, Waiken ILW, ABB, and Advantics are achieving…
Queen’s University Belfast, Hyundai Motor Group, SK On, Terra Innovatum, Waiken ILW, ABB, and Advantics are achieving significant steps in…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV traction inverters as SiC and GaN…
As inverter-based resources replace spinning generation, capacitors are becoming a critical tool for maintaining grid stability.
As inverter-based resources replace spinning generation, capacitors are becoming a critical tool for maintaining grid stability.
Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over…
Fast transients can push the gate driver isolation past its normal limits. This can cause partial discharge and, over time, lead to insulation…
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate…
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…
GaN power devices offer high efficiency, but reliability is now a package-level challenge. CTE mismatch causes…
GaN power devices offer high efficiency, but reliability is now a package-level challenge. CTE mismatch causes solder-joint cracking, which EPC…
High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted…
High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…
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