A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can…
Take an integrated PCB-based power module and combine it with coreless current sensing. This story describes how it can deliver a compact,…
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article,…
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…
In this article, we analyze how monolithic GaN solutions and driver optimization maximize efficiency and power density in…
In this article, we analyze how monolithic GaN solutions and driver optimization maximize efficiency and power density in high-reliability space…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.
GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN…
GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN system-level value and…
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche…
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling…
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…
Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power…
Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept…
Learn how GaN technology enables a low-cost, low-profile 6 kW, 800 VDC to 12.5 VDC converter using an ISOP LLC topology.…
Learn how GaN technology enables a low-cost, low-profile 6 kW, 800 VDC to 12.5 VDC converter using an ISOP LLC topology. This meets the design…
In 2025, nuclear fusion technology scaled up, improved efficiency, and attracted billions of dollars in funding. But is…
In 2025, nuclear fusion technology scaled up, improved efficiency, and attracted billions of dollars in funding. But is it enough to move from lab…
GaN is revolutionizing power for AI data centers and humanoid robots. At Bodo’s Wide Bandgap event, EPC CEO Alex Lidow…
GaN is revolutionizing power for AI data centers and humanoid robots. At Bodo’s Wide Bandgap event, EPC CEO Alex Lidow highlighted GaN's…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…
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