II-VI is now supplying the power electronics giant with 150 mm silicon carbide (SiC) substrates for use in electric vehicle (EV) components.
August 23, 2022 by Ian Hahn
Each day that we wake up and turn on a light, the coffee machine, or electric stove to prepare breakfast, we expect all the electric motors,…
August 23, 2022 by Virgiliu Botan
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
August 22, 2022 by Ahmad Ezzeddine
Wolfspeed has opened its Mohawk Valley Silicon Carbide fabrication facility in Marcy, N.Y. The 200 mm wafer fab aims to lead the transition from…
August 20, 2022 by Bodo Arlt
With its purchase of the high-power silicon carbide specialist, Navitas significantly expands its reach into the EV and solar markets.
August 18, 2022 by Ian Hahn
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
August 16, 2022 by Gary Elinoff
Empower Semiconductor has announced that it has expanded its E-CAP™ family of silicon capacitors with technologies that offer further…
August 13, 2022 by Empower Semiconductor
Bourns says its new trench-gate, field-stop technology IGBTs will offer market-leading efficiency coupled with reliable supply and reduced lead…
August 10, 2022 by Gary Elinoff
Learn about voltage drop calculations in three-phase branch circuits and feeders.
August 09, 2022 by Lorenzo Mari
Power MOSFETs are most often used in switched-mode applications where they function as an on-off switch. However, in applications such as start-up…
August 08, 2022 by Littelfuse
Learn more formulas to calculate voltage drops in single-phase branch circuits and feeders.
August 02, 2022 by Lorenzo Mari
ZapBatt and Toshiba combine their technological expertise to create a more intelligent, safe, and cost-effective battery system for the…
July 29, 2022 by Stephanie Leonida
Inductances connected in parallel are analogous to resistors in parallel. Learn more about inductors in parallel here.
July 28, 2022 by Blaine Geddes
The new BiCMOS device contains two operational amplifiers in a single package and operates with 4-36 V voltage sources.
July 22, 2022 by Gary Elinoff
Part 1 discussed the conductive emission loop during a typical CE test. Part 2 will examine how to use this information to reduce the emission at…
July 21, 2022 by Francesco Poderico
Learn about voltage drops and how to calculate them in branch circuits and feeders.
July 19, 2022 by Lorenzo Mari
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
July 18, 2022 by Roland Buerger
Commercial SiC MOSFETs are derated due to issues with gate oxide reliability. Optimizing the gate oxide reliability can reduce the specific…
July 13, 2022 by Darshil Patel
Introduced July 6 at Dritev, held in Baden-Baden, Germany, the silicon carbide (SiC) inverters target enhanced efficiency in electric vehicle (EV)…
July 13, 2022 by Gary Elinoff
For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…
July 13, 2022 by Giuseppe Vacca
Don't have an EEPower account? Create one now.
Forgot your password? Click here.