Latest Power FETs Articles

Alpine Energy, CATL, Graphite One, Polar Semiconductor, and Nexperia are developing products and facilities for…

Alpine Energy, CATL, Graphite One, Polar Semiconductor, and Nexperia are developing products and facilities for vehicle-to-vehicle charging, energy…

The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in…

The FS3303 is the first in an expanded lineup spanning 3 A to 80 A, aimed at powering the DSPs and photonic ICs in next-generation optical modules

The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…

The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…

Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET…

Reverse recovery charge, QRR, is one of those parameters most power engineers know well. It appears prominently in MOSFET datasheets, it finds its…

ISOMOS from Analog Power Conversion, LLC, (APC-E)/Luminus [1] improves on the thermal performance of the popular TO-247…

ISOMOS from Analog Power Conversion, LLC, (APC-E)/Luminus [1] improves on the thermal performance of the popular TO-247 package used in many…

The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.

The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.

Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in…

Toshiba's TLX9920 eliminates the secondary power supply in MOSFET gate drive circuits, delivering 5000 VRMS isolation in a compact SO6L package.

The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…

The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…

The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching…

The VODA1275 automotive-grade photovoltaic MOSFET driver delivers 20 V output, reinforced isolation, and faster switching for high-voltage systems.

STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges…

STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have released upgraded MOSFETs to meet growing challenges in server and automotive…

Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche…

Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…

As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a…

As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a cornerstone for next-generation…

GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…

GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.

At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…

At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.

Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.

Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.

The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…

The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…

STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…

STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…

The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…

The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…

The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…

The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.