The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower switching losses and 1-3%…
The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower switching losses and 1-3%…
The four 650 V superjunction MOSFET power modules in SOT-227 packages are designed to optimize efficiency and drop-in…
The four 650 V superjunction MOSFET power modules in SOT-227 packages are designed to optimize efficiency and drop-in compatibility for demanding…
The IX800FXF2YMS4 is a 3300-V, 800 A dual SiC MOSFET module rated for 300 kA²s surge current, targeting railway…
The IX800FXF2YMS4 is a 3300-V, 800 A dual SiC MOSFET module rated for 300 kA²s surge current, targeting railway traction, renewable energy, and…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes efficiency, driving higher…
Infineon, Eaton, Navitas, Nexperia, Tata Electronics, Siemens, and Rock Tech Lithium are advancing essentials in power technology.
Infineon, Eaton, Navitas, Nexperia, Tata Electronics, Siemens, and Rock Tech Lithium are advancing essentials in power technology.
AOS pairs its aMOS E2 high-voltage MOSFET platform with the top-side cooled GTPAK package, targeting power supplies,…
AOS pairs its aMOS E2 high-voltage MOSFET platform with the top-side cooled GTPAK package, targeting power supplies, solar inverters, and…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
The PMF2002 multiplexes 12 customer-functionalized graphene sensing channels on one device, while the new Enterprise…
The PMF2002 multiplexes 12 customer-functionalized graphene sensing channels on one device, while the new Enterprise Reader adds direct electronic…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing dose for next-generation…
Nexperia, Aurobay, Coulomb Solutions, Inc., Navitas Semiconductor, GlobalFoundries, and SMA Solar are refining…
Nexperia, Aurobay, Coulomb Solutions, Inc., Navitas Semiconductor, GlobalFoundries, and SMA Solar are refining technologies to meet power needs for…
Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the…
Learn how IceMOS Technology’s MEMS-based superjunction platform pushes power transistor limits, aiming to break the silicon barrier and surpass…
Alpha and Omega Semiconductor's AmpStack packaging stacks a complete 80 V half-bridge inside a single DFN6x5 footprint,…
Alpha and Omega Semiconductor's AmpStack packaging stacks a complete 80 V half-bridge inside a single DFN6x5 footprint, cutting board space…
The MOSFET cuts on-resistance by 26% and improves its power-loss figure of merit by 45%, targeting more efficient power…
The MOSFET cuts on-resistance by 26% and improves its power-loss figure of merit by 45%, targeting more efficient power supplies for AI data…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous…
The four new SO-8 MOSFETs combine a high gate threshold with tight Qgd/Qgs ratios to resist noise in synchronous rectification designs.
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate…
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…
The 60 V and 100 V parts pair low on-resistance with small footprints as industrial systems migrate from 12 V and 24V…
The 60 V and 100 V parts pair low on-resistance with small footprints as industrial systems migrate from 12 V and 24V rails toward 48 V distribution
High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted…
High dv/dt switching can make gate drivers a point of failure. Parasitic coupling and false turn-on may cause unwanted switching and put extra…
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an…
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V…
Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower…
Learn how Bosch’s Gen3 SiC MOSFETs boost EV drivetrain performance. Its new trench architecture delivers 20% lower resistance and 10% lower…
Infineon, Mitsubishi Electric, Semikron Danfoss, Fraunhofer IAF, Wolfspeed, EPC, and Onsemi introduced products and…
Infineon, Mitsubishi Electric, Semikron Danfoss, Fraunhofer IAF, Wolfspeed, EPC, and Onsemi introduced products and innovations in power…
Facebook
Google
GitHub
Linkedin