The role of high-voltage discrete power semiconductor devices has become increasingly important in the world of power electronics. Littelfuse…
March 11, 2023 by Littelfuse
Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to multiple facilities.
January 08, 2023 by Mike Falter
Alpha & Omega Semiconductor has announced new 650- and 750-volt silicon carbide MOSFETs for solar inverters, motor drives, industrial power…
November 20, 2022 by Mike Falter
High-Voltage Direct Current technology has seen many technological advancements in the past century. This article provides an introduction and…
August 22, 2022 by Ahmad Ezzeddine
The new gallium nitride (GaN) FET joins EPC’s well-established line aimed at space-based applications including DC-DC power, motor drives, and…
July 04, 2022 by Gary Elinoff
New technological and market trends are constantly pushing for smaller solutions with higher power capabilities. The advancement of electric…
June 08, 2022 by Tomas Hudson
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.…
June 06, 2022 by Xuning Zhang
The fresh EPC2066 is an enhancement-mode gallium nitride (eGaN) power FET expanding the company’s extensive portfolio of low-voltage,…
June 05, 2022 by Gary Elinoff
While the XHP 2 power module package from Infineon Technologies AG is designed for use in today’s applications, it also meets the requirements of…
May 28, 2022 by Wilhelm Rusche
The latest addition to Efficient Power Conversion’s (EPC) line of rad-hardened devices features a maximum RDS(ON) of 25 mΩ and 20 A of…
May 09, 2022 by Gary Elinoff
The surface-mounted gallium nitride (GaN) device handles 95 A of continuous drain current and sports an RDS(ON) of only 4 milliohms.
April 19, 2022 by Gary Elinoff
The enhancement mode power transistor features a maximum continuous drain current of 6.3 A and a maximum RDS(ON) of 80 mΩ
April 08, 2022 by Gary Elinoff
The new gallium nitride (GaN) device provides a safety margin of 3 V, as compared to the 1 V margin offered by standard devices of 200 V or less.
March 31, 2022 by Gary Elinoff
The radiation-tolerant device is available in a space-saving flip chip die, and is aimed at driving the company’s 100 V gallium nitride (GaN)…
March 07, 2022 by Gary Elinoff
The largest growth area for silicon carbide FETs is expected in the electric vehicle traction inverter, offering extended range, lower battery…
March 01, 2022 by Anup Bhalla, UnitedSiC
Fly-back converter ICs maximizing performance, reducing system cost and increasing reliability for industrial and consumer power supply solutions.
February 07, 2022 by ROHM Semiconductor
In this article we present the results of analysis of current requirements of traction converters powered by 750 V DC and 1500 V DC. Based on these…
February 02, 2022 by Praneet Bhatnagar
Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
December 31, 2021 by Anushree Ramanath
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
December 06, 2021 by Iain Mosely
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…
December 06, 2021 by Christian Winter
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