Learn how GaN technology enables a low-cost, low-profile 6 kW, 800 VDC to 12.5 VDC converter using an ISOP LLC topology. This meets the design…
Learn how GaN technology enables a low-cost, low-profile 6 kW, 800 VDC to 12.5 VDC converter using an ISOP LLC topology. This meets the design…
In 2025, nuclear fusion technology scaled up, improved efficiency, and attracted billions of dollars in funding. But is…
In 2025, nuclear fusion technology scaled up, improved efficiency, and attracted billions of dollars in funding. But is it enough to move from lab…
GaN is revolutionizing power for AI data centers and humanoid robots. At Bodo’s Wide Bandgap event, EPC CEO Alex Lidow…
GaN is revolutionizing power for AI data centers and humanoid robots. At Bodo’s Wide Bandgap event, EPC CEO Alex Lidow highlighted GaN's…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance…
Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller,…
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.
A bandgap reference, an error amplifier, and an output transistor in one three-pin device. It's still a staple after…
A bandgap reference, an error amplifier, and an output transistor in one three-pin device. It's still a staple after nearly five decades.
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in…
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
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