Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency…
Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller,…
Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.
A bandgap reference, an error amplifier, and an output transistor in one three-pin device. It's still a staple after…
A bandgap reference, an error amplifier, and an output transistor in one three-pin device. It's still a staple after nearly five decades.
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in…
Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a…
Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging…
This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the…
Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
A University of Sydney team has created a 23.3%-efficient, 16 cm2 tandem solar cell with world-first stability metrics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
The design features wide bandgap semiconductors in a full-bridge LLC with planar magnetics.
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power…
Infineon, Toshiba, and Rohm’s product releases and proven applications indicate continued growth in the high-power MOSFET market.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
In this third and last part of the series we delve into the Isolated DC-DC converter that follows the PFC.
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs,…
Learn how front-side copper metallization (FSM) is unlocking the full potential of Silicon Carbide (SiC) MOSFETs, especially as devices shrink in…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful…
SiC trench gate MOSFETs deliver superior performance in terms of both switching and conduction losses, but careful attention must be paid to the…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad…
Wise Integration’s WiseWare 1.1 targets compact, high-efficiency AC-DC converters with integrated ZVS control and broad GaN compatibility.
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density…
The new SiC-LV100 SiC-MOSFET module features an optimized structure that tackles the challenges of high current density and high-speed switching.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Rohm’s high-speed isolated gate driver IC is optimized for HV-GaN HEMTs.
Facebook
Google
GitHub
Linkedin