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Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Inside the Silicon Carbide JFET: Specs, Stability, and the New Performance Frontier

Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…


Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Polycrystalline-SiC-Based Substrate Boosts Performance of SiC Power Devices

Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…


Rad-Hard GaN MOSFETs Beat Silicon Alternatives for Satellite Designs

Rad-Hard GaN MOSFETs Beat Silicon Alternatives for Satellite Designs

Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…


Infineon Unveils Isolated Gate Drivers With Opto-Emulator Input for SiC

Infineon Unveils Isolated Gate Drivers With Opto-Emulator Input for SiC

The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.


new products Mar 17, 2026 by Charles Lee
Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Beyond Mobility: Delivering Proven SiC Technology Where Performance and Reliability Matter the Most

Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…


Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Using Low-Voltage GaN in ISOP Converters for AI Servers With 800 V Architecture

Over the past decade, AI workloads have relied on server architectures not designed for their rapidly growing power demands. Recently, the concept…


Case Study—A Low-Cost, Low-Profile 6-kW, 800 V to 12.5 V DC-DC for AI Power

Case Study—A Low-Cost, Low-Profile 6-kW, 800 V to 12.5 V DC-DC for AI Power

Learn how GaN technology enables a low-cost, low-profile 6 kW, 800 VDC to 12.5 VDC converter using an ISOP LLC topology. This meets the design…


 With Steady Progress, Fusion Tech Inches Closer to Feasibility

With Steady Progress, Fusion Tech Inches Closer to Feasibility

In 2025, nuclear fusion technology scaled up, improved efficiency, and attracted billions of dollars in funding. But is it enough to move from lab…


Rethinking Power: GaN Innovation for Data Centers and Humanoid Robots

Rethinking Power: GaN Innovation for Data Centers and Humanoid Robots

GaN is revolutionizing power for AI data centers and humanoid robots. At Bodo’s Wide Bandgap event, EPC CEO Alex Lidow highlighted GaN's…


Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

Predicting and Controlling Thermal Runaway in High-Voltage Power Modules

In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…


An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

An Exploration of Surface Mount Power Packaging Technologies for SiC MOSFETs

Surface-mount packaging for SiC MOSFETs boosts power density, reduces parasitics, and improves thermal performance compared to legacy packages,…


Our 2025 Top Trend: AI Assimilates

Our 2025 Top Trend: AI Assimilates

Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…


News Dec 29, 2025 by Dale Wilson
Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Selecting the Right SiC MOSFET for Efficient Zero-Voltage Switching

Learn how research with 1200 V SiC MOSFETs can help designers select the optimal SiC devices for their high-frequency softswitching applications.


Three-Phase Module Based on Monolithic Gan Half-Bridge ICs

Three-Phase Module Based on Monolithic Gan Half-Bridge ICs

Learn about the EPC33110, a three-phase module that uses GaN monolithic ICs. It enables the development of smaller, lighter motor drive inverters.


TL431: The Precision Shunt Regulator That Quietly Took Over Power Supplies

TL431: The Precision Shunt Regulator That Quietly Took Over Power Supplies

A bandgap reference, an error amplifier, and an output transistor in one three-pin device. It's still a staple after nearly five decades.


tech insights Dec 10, 2025 by Luke James
The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

The Future of Power Conversion in Home Appliances with SiC SLIMDIPs

Learn how two new Mitsubishi SLIMDIP IPMs address the growing need for high-efficiency power semiconductor devices in consumer applications.


Boost Inverter Efficiency by Decoupling Switching Losses and Switching Speeds

Boost Inverter Efficiency by Decoupling Switching Losses and Switching Speeds

Learn how researchers at FAU Erlangen-Nürnberg, in collaboration with Sanan Semiconductor, have developed a soft-switching inverter that achieves…


Advancing Industrial Power Conversion With Silicon Carbide

Advancing Industrial Power Conversion With Silicon Carbide

This article explores the benefits of SiC devices in selected use cases, including HVAC systems, DC fast charging infrastructure, and solar and…


Onsemi Unveils Vertical GaN ICs for AI and Electrification

Onsemi Unveils Vertical GaN ICs for AI and Electrification

The vertical GaN (vGaN) power semiconductors claim to boost performance and efficiency in data centers, EVs, and renewables.


new products Nov 10, 2025 by Jake Hertz
Lossless Current Sensing in Motor Drive Applications

Lossless Current Sensing in Motor Drive Applications

Quite often, low-side current sensing is considered to be the most cost-effective method to provide feedback to the controller in motor drive…