The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package, targeting appliances and…
The two flyback converters integrate a 700 V GaN transistor, gate driver, and controller in a single 5 mm x 6 mm package, targeting appliances and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article,…
Engineers need practical tools for evaluating GaN motor inverter architectures. The boards described in this article, EPC9186HC2/HC3 and EPC91202,…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…
In this article, we analyze how monolithic GaN solutions and driver optimization maximize efficiency and power density in…
In this article, we analyze how monolithic GaN solutions and driver optimization maximize efficiency and power density in high-reliability space…
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET,…
The EPC9186HC2 and EPC9186HC3 are three-phase GaN evaluation boards built around the 0.75 mΩ EPC2361 eGaN FET, delivering up to 150 A RMS and 5 kW…
Enphase Energy expands its commercial solar footprint by shipping high-efficiency microinverters for complex three-phase grids.
Enphase Energy expands its commercial solar footprint by shipping high-efficiency microinverters for complex three-phase grids.
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
The STDRIVEG212 and STDRIVEG612 bring fast switching and smart shutdown to motion control and power conversion applications.
GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN…
GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN system-level value and…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
This article details a GaN-based synchronous CCM-PFC design for hydraulic pump power supplies. It achieves 98.5% peak…
This article details a GaN-based synchronous CCM-PFC design for hydraulic pump power supplies. It achieves 98.5% peak efficiency at 300W and…
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Renesas unveiled two GaN solutions for high-power applications, from chargers to solar inverters.
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional…
At APEC 2026, Power Integrations introduced its TopSwitchGaN 440 W, which unites PowiGaN switches with traditional TOPSwitch architecture,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and…
Learn how rad-hard GaN FETs surpass silicon in satellite power systems. They offer superior SWaP, higher efficiency, and radiation immunity for…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20…
The integrated three-phase BLDC motor drive inverter integrates control, sensing, and communication to deliver up to 20 ARMS for humanoid joint…
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