The new system-in-package integrates two 650 V GaN transistors and a dedicated high-frequency gate driver, boosting power density in adapters,…
The new system-in-package integrates two 650 V GaN transistors and a dedicated high-frequency gate driver, boosting power density in adapters,…
The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower…
The 650 V dual-side-cooled FET cuts footprint by 57% versus TOLT, while its 100V E-mode family delivers 40-70% lower switching losses and 1-3%…
The SDM100G series of desktop power adapters blends GaN technology with versatile USB-C Power Delivery (PD) to streamline…
The SDM100G series of desktop power adapters blends GaN technology with versatile USB-C Power Delivery (PD) to streamline system design for modern…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes…
Learn how EPC’s 100 V EPC2375 GaN transistor features a novel 3-pad package that reduces resistance and maximizes efficiency, driving higher…
Discover how optimizing gate resistance and adding RC snubber networks can effectively suppress gate voltage oscillations…
Discover how optimizing gate resistance and adding RC snubber networks can effectively suppress gate voltage oscillations and overshoots during GaN…
The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply…
The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP…
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing…
The three radiation-hardened eGaN FETs combine sub-milliohm on-resistance with immunity to over 1 Mrad of total ionizing dose for next-generation…
Nexperia, Aurobay, Coulomb Solutions, Inc., Navitas Semiconductor, GlobalFoundries, and SMA Solar are refining…
Nexperia, Aurobay, Coulomb Solutions, Inc., Navitas Semiconductor, GlobalFoundries, and SMA Solar are refining technologies to meet power needs for…
In this interview article, we learn about EPC’s Gen 8 GaN platform for AI power delivery and Trinity motor control—on…
In this interview article, we learn about EPC’s Gen 8 GaN platform for AI power delivery and Trinity motor control—on display this week at PCIM…
This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and…
This new electronic speed controller pushes efficiency boundaries to enhance professional drone propulsion systems and streamline mission-specific…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both…
The new gate driver pairs a truly differential input with onboard regulation and Miller Clamp protection to support both GaN HEMTs and logic-level…
The 2,000 VDC WT1500 precision power analyzer features four power channels and a 2 HMz wideband element. A multi-unit…
The 2,000 VDC WT1500 precision power analyzer features four power channels and a 2 HMz wideband element. A multi-unit sync is available soon.
Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for…
Learn how GaN technology is revolutionizing AI data centers by enabling high-efficiency power conversion for multi-kilowatt GPUs and emerging 800 V…
Navitas, Magnachip, Ionate, GM, Brookfield, Aypa Power, Blackstone, Ricardo, and Nissan are advancing high-voltage SiC,…
Navitas, Magnachip, Ionate, GM, Brookfield, Aypa Power, Blackstone, Ricardo, and Nissan are advancing high-voltage SiC, smart grids, energy storage…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV…
The MLX91229 Hall sensor trades an analog output for a digital bitstream to keep current readings clean inside EV traction inverters as SiC and GaN…
As inverter-based resources replace spinning generation, capacitors are becoming a critical tool for maintaining grid stability.
As inverter-based resources replace spinning generation, capacitors are becoming a critical tool for maintaining grid stability.
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate…
This article examines the deployment of gallium nitride (GaN) field-effect transistors (FETs) featuring integrated gate drivers in a three-phase…
Tesla, NetPower, QuantumScape, Honda, Nissan, and PowerBank are investing to advance battery, EV, and solar technologies.
Tesla, NetPower, QuantumScape, Honda, Nissan, and PowerBank are investing to advance battery, EV, and solar technologies.
GaN power devices offer high efficiency, but reliability is now a package-level challenge. CTE mismatch causes…
GaN power devices offer high efficiency, but reliability is now a package-level challenge. CTE mismatch causes solder-joint cracking, which EPC…
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