Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V…
Nexperia rolled out two wide-bandgap product updates: a top-side cooled QDPAK package for its 1200 V SiC MOSFETs, and an expanded lineup of 650 V…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement…
The new wideband shunts and the high-voltage differential probe are designed to enable engineers to extend measurement coverage from precision…
Rohm has launched a free, browser-based simulator built on the PLECS environment, enabling power electronics engineers to…
Rohm has launched a free, browser-based simulator built on the PLECS environment, enabling power electronics engineers to run loss and thermal…
Infineon, Mitsubishi Electric, Semikron Danfoss, Fraunhofer IAF, Wolfspeed, EPC, and Onsemi introduced products and…
Infineon, Mitsubishi Electric, Semikron Danfoss, Fraunhofer IAF, Wolfspeed, EPC, and Onsemi introduced products and innovations in power…
Wolfspeed has released two 3.3 kV SiC modules: an LM half-bridge reducing switching losses by 42% and a WolfPACK…
Wolfspeed has released two 3.3 kV SiC modules: an LM half-bridge reducing switching losses by 42% and a WolfPACK full-bridge offering 50% smaller…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers…
The new Elite Pairing Studio is an interactive cloud-based simulation tool designed to give power electronics engineers deep visibility into…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale data centers.
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.
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