A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
A new automotive silicon carbide power module pushes thermal boundaries to enhance electric vehicle traction inverter density and streamline…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale…
New HV-D3 mSiC silicon carbide phase leg modules enhance grid-to-rack efficiency and thermal robustness for hyperscale data centers.
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation,…
The high-power CoolSiC variants support 1500 V DC-link voltages, with RDS(on) from 1 to 2 mΩ and 4 or 6 kV isolation, targeting wind, solar, and…
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
The high-voltage TVS diode family delivers a stand-off voltage of up to 400 V in a single AEC-Q101 SMC package.
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG…
Learn how Sanan offers a solution-based, vertically integrated manufacturing platform for advanced SiC/GaN WBG technologies, enabling faster…
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
The B82722V6*B040 series common-mode chokes combine compact size and high resonance performance in high-voltage power electronics.
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground…
Improper sensor placement in high-voltage systems can lead to distorted measurements. This article explains how ground shifts, dv/dt, and layout…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical…
By combining Schottky and PiN diode structures in a single, monolithic device, SiC MPS diodes overcome the historical trade-offs between low…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe…
Oscilloscope bandwidth can quietly change high-voltage transients and hide the real dv/dt stress, not just probe capacitance or ground inductance.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions,…
Learn how SmartSiC technology using Smart Cut overcomes standard Silicon Carbide limitations, reducing CO2 emissions, boosting device efficiency…
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The new family of opto-emulator gate drivers provides drop-in replacements to conventional silicon, IGBT, and SiC MOSFET designs.
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling…
Learn how Mitsubishi Electric’s latest Unifull SiC modules combine advanced performance with enhanced power cycling capability enabled by…
The growing demand for powerful and compact power electronics places high demands on the thermal management of modern…
The growing demand for powerful and compact power electronics places high demands on the thermal management of modern semiconductor technologies.…
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
Single-crystal 12-inch SiC wafer production marks a significant manufacturing milestone with potential next-generation…
Single-crystal 12-inch SiC wafer production marks a significant manufacturing milestone with potential next-generation applications.
The silicon carbide gate drivers and an ultra-low-loss isolated current sensor can improve efficiency and power density…
The silicon carbide gate drivers and an ultra-low-loss isolated current sensor can improve efficiency and power density in high-voltage systems.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
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