Ancora Semicondutor Inc. receives substantial investment to grow galium-nitride technology development.
About 8 hours ago by Stephanie Leonida
Infineon’s two-level, slew-rate control (2L-SRC) gate driver IC enables a reduction of the number of paralleled IGBTs through a slew-rate-control…
4 days ago by Wolfgang Frank
The 2.0 kV module is offering a competitive solution due to its simplified inverter design and layout, higher power density and high level of…
September 17, 2022 by Thomas Radke
A breakdown of what’s in the new CHIPS and Science Act and what to expect in the semiconductor industry over the coming months.
August 30, 2022 by Shannon Cuthrell
II-VI is now supplying the power electronics giant with 150 mm silicon carbide (SiC) substrates for use in electric vehicle (EV) components.
August 23, 2022 by Ian Hahn
Each day that we wake up and turn on a light, the coffee machine, or electric stove to prepare breakfast, we expect all the electric motors,…
August 23, 2022 by Virgiliu Botan
Wolfspeed has opened its Mohawk Valley Silicon Carbide fabrication facility in Marcy, N.Y. The 200 mm wafer fab aims to lead the transition from…
August 20, 2022 by Bodo Arlt
With its purchase of the high-power silicon carbide specialist, Navitas significantly expands its reach into the EV and solar markets.
August 18, 2022 by Ian Hahn
Efficient Power Conversion’s new EPC2302 eGaN IC switches at 1 MHz and boasts a withstand voltage of up to 100 V.
August 16, 2022 by Gary Elinoff
Empower Semiconductor has announced that it has expanded its E-CAP™ family of silicon capacitors with technologies that offer further…
August 13, 2022 by Empower Semiconductor
Bourns says its new trench-gate, field-stop technology IGBTs will offer market-leading efficiency coupled with reliable supply and reduced lead…
August 10, 2022 by Gary Elinoff
Power MOSFETs are most often used in switched-mode applications where they function as an on-off switch. However, in applications such as start-up…
August 08, 2022 by Littelfuse
The fresh power transient voltage suppressors (PTVS) measure only 8 x 6 x 2.5 mm while offering 1 and 2 kiloamp surge protection.
August 03, 2022 by Gary Elinoff
Together, the companies will look to deliver a portfolio of end-to-end wireless power transfer solutions for industrial and automotive applications.
July 21, 2022 by Ian Hahn
The company’s two new series of fast recovery diodes (FRDs) feature low noise characteristics, low forward voltage (VF), and fast reverse…
July 20, 2022 by Gary Elinoff
Power conversion products based on wide bandgap semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC) are now…
July 18, 2022 by Roland Buerger
Commercial SiC MOSFETs are derated due to issues with gate oxide reliability. Optimizing the gate oxide reliability can reduce the specific…
July 13, 2022 by Darshil Patel
Introduced July 6 at Dritev, held in Baden-Baden, Germany, the silicon carbide (SiC) inverters target enhanced efficiency in electric vehicle (EV)…
July 13, 2022 by Gary Elinoff
For a long time, silicon-based devices have represented the baseline standard in the semiconductor landscape. Starting from 2007, due to Moore’s…
July 13, 2022 by Giuseppe Vacca
The company says its fresh DFN MOSFETs, which measure 0.63 x 0.33 x 0.25 mm, are the world’s smallest.
July 12, 2022 by Gary Elinoff
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