The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and…
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and noise immunity.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules…
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules help ensure efficient designs.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Engineers, CEOs, and analysts lent us their expert insights on issues and solutions in the power industry.
Engineers, CEOs, and analysts lent us their expert insights on issues and solutions in the power industry.
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy infrastructure, and data…
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
The SCT40xxDLL family targets high-density power systems with improved thermal performance and reduced height.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Rohm, Littelfuse, and Ideal Semiconductor each introduced high-performance MOSFETs.
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for…
Learn how to model and manage heat in 4-6.5 kV IGBT and SiC modules using coupled electro-thermal simulations for accurate cooling and reliable…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added…
This article will examine various layout strategies for GaN FETs, analyzing how different PCB configurations affect added resistance for each design.
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
The dual-phase trans-inductance voltage regulator modules aim to bring compact, high-efficiency power to AI and HPC workloads
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Nexperia, Toshiba, and Infineon have designed MOSFETs that offer different strategies in advancing high-power design.
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
Learn how a new MOSFET architecture stretches the performance of silicon power devices using a patented approach.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The new single-channel driver uses capacitive isolation to tighten control of Si/SiC MOSFETs and IGBTs in noisy power stages.
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V…
The 100 V MOSFETs in compact CCPAK1212 packaging cut conduction losses, save space, and boost performance in 48 V automotive applications.
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