Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
Learn how SiC JFETs beat MOSFETs for next-gen power. They offer ultralow loss, superior stability, and rugged avalanche protection—critical for…
As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a…
As the demand for high-efficiency energy systems grows, high-voltage super junction MOSFET technology has become a cornerstone for next-generation…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center…
GaN-based power delivery board targets 96.5% efficiency and 2,100 W/in3 for NVIDIA's next-generation 800 VDC data center architecture.
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for…
At APEC 2026, SemiQ released a new family of high-performance half-bridge MOSFET modules to optimize power conversion for high-voltage applications.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
Compared to IGBTs, the MOSFET delivers greater power density, lower thermal load, and lower costs.
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current…
The TPD7110F integrates reverse-polarity protection, overvoltage and undervoltage shutoff, and VDS-based reverse-current blocking in a 2.9 × 2.8…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate…
STMicroelectronics has introduced an automotive high-side driver for harsh electrical transients and isolated gate drivers for high-voltage…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a…
The CoolGaN Drive HB 600 V G5 family packs two GaN switches, high- and low-side drivers, and a bootstrap diode into a single compact module for…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and…
The 5th-gen 1200 V trench-assisted planar SiC MOSFETs offer 35% FoM improvement, improved switching behavior, and extended reliability testing.
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140…
The MasterGAN6 power system-in-package integrates two 650 V GaN transistors with a high-speed gate driver, delivering 140 mΩ RDS(on), 10 A output,…
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
EPC2366, aimed at low-voltage, high-current applications, enters mass production for high-density 40 V systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The five 1200 V SiC MOSFET power modules support up to 200 A for automotive, energy, and industrial systems.
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and…
The 600 V gate driver family offers 12 devices for motor control and power conversion, supporting fast switching and noise immunity.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
The αMOS E2 platform seeks to deliver efficiency, ruggedness, and power density for high-voltage power conversion.
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules…
E-mobility is driving significant demand for power electronics, particularly inverters. High-performance power modules help ensure efficient designs.
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver…
Vishay, SemiQ, Infineon, and Alpha & Omega Semiconductor have released upgraded SiC MOSFET products to deliver efficiency, thermal performance,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters,…
In this article, we take a system-level look at how thermal runaway begins, propagates across multi-module converters, and how engineers can model,…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the…
Do you remember when supercomputers were described by their processing power? That was so 2024. Today, we talk about the power for processing.…
Engineers, CEOs, and analysts lent us their expert insights on issues and solutions in the power industry.
Engineers, CEOs, and analysts lent us their expert insights on issues and solutions in the power industry.
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy…
The top-side-cooled MOSFETs combine silicon carbide performance with improved thermal paths for electric vehicles, energy infrastructure, and data…
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