Learn about the applications of WBG based semiconductor devices specifically in automotive applications.
December 31, 2021 by Anushree Ramanath
GaAs power diodes are wide bandgap semiconductor devices that exhibit excellent performance at about 70% of the cost of Silicon Carbide (SiC). In a…
December 06, 2021 by Iain Mosely
Power efficiency is a key enabler of a greener future. This is particularly true for the industrial sector, where the demand for electrical energy…
December 06, 2021 by Christian Winter
When it comes to high-power applications with highest reliability requirements, HV-IGBTs in the famous std-type package are still the favorable…
November 30, 2021 by Nils Soltau
Gallium nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all…
November 29, 2021 by Ilian Bonov
High performance devices supplemented with system solution support. In 2010, ROHM has introduced its first commercial SiC MOSFET into the power…
November 03, 2021 by Christian Felgemacher
A new transistor, using photon manipulation instead of electronic signals, was created by an international research team led by Skoltech and IBM.
October 29, 2021 by Ahmad Ezzeddine
The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.
October 28, 2021 by Gary Elinoff
EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…
October 27, 2021 by Hailey Stewart
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…
October 26, 2021 by Hailey Stewart
Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…
October 26, 2021 by Ryo Takeda
Pre-Switch expands its operations with its new headquarters in San Jose and plans to accelerate the application of its AI-based technology to areas…
October 13, 2021 by Stephanie Leonida
HVCB High Voltage Precision Chip Resistors Offer 0.1% Tolerance and 25 ppm TCR.
October 11, 2021 by Hailey Stewart
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
September 30, 2021 by Gary Elinoff
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
September 20, 2021 by Stephanie Leonida
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
September 15, 2021 by Gary Elinoff
This article examines the use of power semiconductors in a low voltage drive with the general architecture.
September 12, 2021 by Christian Winter
For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…
August 31, 2021 by Antonio Anzaldua Jr.
Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.
August 10, 2021 by Hailey Stewart
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